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Transistors

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2N5210TAR
2N5210TAR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock176

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2N5210TF
2N5210TF

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock312

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2N5210TFR
2N5210TFR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.1A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 30MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock229

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2N5224
2N5224

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN LO LEVEL SWITCH TRANS TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 3mA, 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 625mW
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock229

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2N5226
2N5226

ON Semiconductor

Transistors - Bipolar (BJT) - Single

PNP AMP TRANS./2N5225 COMPLIMENT

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 800mV @ 10mA, 100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock360

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2N5232A
2N5232A

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.1A TO-92

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 125mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock5,458

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2N5237
2N5237

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock367

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2N5238
2N5238

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock278

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2N5238S
2N5238S

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock460

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2N5240
2N5240

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock173

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2N5241
2N5241

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock108

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2N5301
2N5301

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock374

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2N5301
2N5301

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 30A TO-3

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Power - Max: 200W
  • Frequency - Transition: 4MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock1,231

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2N5302
2N5302

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock124

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2N5302G
2N5302G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 60V 30A TO3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 30A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
  • Current - Collector Cutoff (Max): 5mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
  • Power - Max: 200W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204 (TO-3)
In Stock583

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2N5303
2N5303

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock321

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2N5303
2N5303

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 80V 20A TO-3

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 20A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Power - Max: 200W
  • Frequency - Transition: 2MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-3
In Stock566

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2N5306
2N5306

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 25V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock443

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2N5306
2N5306

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 25V 0.3A TO-92

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock6,361

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2N5306_D74Z
2N5306_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 25V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock203

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2N5307
2N5307

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock318

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2N5307_D74Z
2N5307_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock368

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2N5308
2N5308

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock331

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2N5308
2N5308

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 0.3A TO-92

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 300mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 60MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock3,632

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2N5308_D26Z
2N5308_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock335

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2N5308_D27Z
2N5308_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock443

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2N5308_D74Z
2N5308_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock116

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2N5308_D75Z
2N5308_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN DARL 40V 1.2A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.4V @ 200µA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 7000 @ 2mA, 5V
  • Power - Max: 625mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock446

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2N5320
2N5320

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN 10W TRANS./2N5322 COMPLIMENT

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
  • Power - Max: 10W
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock349

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2N5320
2N5320

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 75V 2A TO-39

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 4V
  • Power - Max: 10W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock689

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