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Bipolar (BJT) - Arrays (1,432)
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Bipolar (BJT) - Single (13,715)
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Records 64,903

Page 18/2164

Part Number	Description	In Stock
HCT700 TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead	In Stock120 More on Order
HCT700TX TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead	In Stock403 More on Order
HCT700TXV TT Electronics/Optek Technology	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V/60V SMT Manufacturer: TT Electronics/Optek Technology Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 800mA, 600mA Voltage - Collector Emitter Breakdown (Max): 50V, 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V Power - Max: 400mW Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead	In Stock308 More on Order
HN1A01FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock200 More on Order
HN1A01FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock10,138 More on Order
HN1A01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock105 More on Order
HN1A01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6-PLN Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock370 More on Order
HN1A01FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock340 More on Order
HN1A01F-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,069 More on Order
HN1B01FDW1T1 ON Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.2A SC74 Manufacturer: ON Semiconductor Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	In Stock312 More on Order
HN1B01FDW1T1G ON Semiconductor	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.2A SC74 Manufacturer: ON Semiconductor Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 380mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SC-74	In Stock8,886 More on Order
HN1B01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock282 More on Order
HN1B01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6-PLN Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW, 210mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock158 More on Order
HN1B01FU-Y(L,F,T) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock237 More on Order
HN1B04FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock11,957 More on Order
HN1B04FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock228 More on Order
HN1B04F(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 30V 0.5A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock437 More on Order
HN1B04FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock358 More on Order
HN1B04FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays X34 PB-F US6 PLN (LF) TRANSISTOR Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock3,909 More on Order
HN1B04FU-Y(T5L,F,T Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS NPN/PNP 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock203 More on Order
HN1C01FE-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock5,849 More on Order
HN1C01FE-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A ES6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	In Stock465 More on Order
HN1C01F-GR(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 800MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock295 More on Order
HN1C01FU-GR,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock355 More on Order
HN1C01FU-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays NPN + NPN IND. TRANSISTOR VCEO50 Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock306 More on Order
HN1C01FU-Y(T5L,F,T Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock213 More on Order
HN1C01FYTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 50V 0.15A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock4,069 More on Order
HN1C03F-B(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.3A SM6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 300mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	In Stock169 More on Order
HN1C03FU-A(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays TRANS 2NPN 20V 0.3A US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Power - Max: 200mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock155 More on Order
HN1C03FU-B,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Arrays NPN + NPN IND. TRANSISTOR VCEO20 Manufacturer: Toshiba Semiconductor and Storage Series: *	In Stock388 More on Order

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