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Transistors

Records 64,903
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Part Number
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2N5415
2N5415

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS PNP 200V 1A TO-39

  • Manufacturer: STMicroelectronics
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 15MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock121

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2N5415
2N5415

ON Semiconductor

Transistors - Bipolar (BJT) - Single

PNP 10W 200V 1A TRANSISTOR

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 200V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1W
  • Mounting Type: Through Hole
  • Package / Case: TO-39
  • Supplier Device Package: TO-39
In Stock145

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2N5415
2N5415

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTORS

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock163

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2N5415S
2N5415S

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTORS

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock474

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2N5415UA
2N5415UA

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTORS

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock353

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2N5416
2N5416

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS PNP 300V 1A TO-39

  • Manufacturer: STMicroelectronics
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 15MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock405

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2N5416
2N5416

Microsemi

Transistors - Bipolar (BJT) - Single

PNP TRANSISTORS

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock462

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2N5416
2N5416

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 15MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock270

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2N5416UA
2N5416UA

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock195

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2N5416UA/TR
2N5416UA/TR

Microsemi

Transistors - Bipolar (BJT) - Single

POWER BJT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, No Lead
  • Supplier Device Package: UA
In Stock116

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2N5427
2N5427

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS PNP 80V 7A TO-66

  • Manufacturer: Microsemi Corporation
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 7A, 80V
  • Power - Max: 40W
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66
In Stock483

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2N5428
2N5428

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock238

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2N5429
2N5429

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock265

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2N5430
2N5430

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

SILICON NPN TRANSISTORS

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Power - Max: 40W
  • Frequency - Transition: 30MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66
In Stock271

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2N5430
2N5430

Microsemi

Transistors - Bipolar (BJT) - Single

NPN TRANSISTOR

  • Manufacturer: Microsemi Corporation
  • Series: *
In Stock158

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2N5434
2N5434

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS SMALL SIGNAL

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
In Stock189

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2N5550
2N5550

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock412

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2N5550-AP
2N5550-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANS NPN BIPOLAR TO-92

  • Manufacturer: Micro Commercial Co
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92
In Stock478

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2N5550BU
2N5550BU

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock318

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2N5550_D26Z
2N5550_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock277

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2N5550G
2N5550G

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock111

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2N5550_J24Z
2N5550_J24Z

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock464

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2N5550RLRA
2N5550RLRA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock210

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2N5550RLRAG
2N5550RLRAG

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock482

More on Order

2N5550RLRP
2N5550RLRP

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock372

More on Order

2N5550RLRPG
2N5550RLRPG

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock210

More on Order

2N5550TA
2N5550TA

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock21,399

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2N5550TAR
2N5550TAR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock19,478

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2N5550TF
2N5550TF

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock263

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2N5550TFR
2N5550TFR

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS NPN 140V 0.6A TO-92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 140V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock130

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