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Page 2063/2164

Part Number	Description	In Stock
IRG4PH40UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 41A 160W TO247-3 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 82A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Power - Max: 160W Switching Energy: 1.8mJ (on), 1.93mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 46ns/97ns Test Condition: 800V, 21A, 10Ohm, 15V Reverse Recovery Time (trr): 63ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock169 More on Order
IRG4PH40UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 41A 160W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 82A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Power - Max: 160W Switching Energy: 1.8mJ (on), 1.93mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 46ns/97ns Test Condition: 800V, 21A, 10Ohm, 15V Reverse Recovery Time (trr): 63ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock1,991 More on Order
IRG4PH40UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 41A 160W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 41A Current - Collector Pulsed (Icm): 82A Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A Power - Max: 160W Switching Energy: 1.04mJ (on), 3.4mJ (off) Input Type: Standard Gate Charge: 86nC Td (on/off) @ 25°C: 24ns/220ns Test Condition: 960V, 21A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock865 More on Order
IRG4PH50KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A Power - Max: 200W Switching Energy: 3.83mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 87ns/140ns Test Condition: 800V, 24A, 5Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock5,799 More on Order
IRG4PH50KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A Power - Max: 200W Switching Energy: 1.21mJ (on), 2.25mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: 36ns/200ns Test Condition: 960V, 24A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock283 More on Order
IRG4PH50S-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 57A 200W TO247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 114A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 200W Switching Energy: 1.8mJ (on), 19.6mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 32ns/845ns Test Condition: 960V, 33A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock216 More on Order
IRG4PH50SPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 57A 200W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 114A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 200W Switching Energy: 1.8mJ (on), 19.6mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25°C: 32ns/845ns Test Condition: 960V, 33A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock467 More on Order
IRG4PH50UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A Power - Max: 200W Switching Energy: 2.1mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 47ns/110ns Test Condition: 800V, 24A, 5Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock3,042 More on Order
IRG4PH50UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 200W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 180A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 24A Power - Max: 200W Switching Energy: 530µJ (on), 1.41mJ (off) Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 35ns/200ns Test Condition: 960V, 24A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock8,110 More on Order
IRG4PSC71K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 350W Switching Energy: 790µJ (on), 1.98mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 34ns/54ns Test Condition: 480V, 60A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock314 More on Order
IRG4PSC71KD Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 350W Switching Energy: 3.95mJ (on), 2.33mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 82ns/282ns Test Condition: 480V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 82ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock173 More on Order
IRG4PSC71KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 350W Switching Energy: 3.95mJ (on), 2.33mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 82ns/282ns Test Condition: 480V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 82ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock727 More on Order
IRG4PSC71KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Power - Max: 350W Switching Energy: 790µJ (on), 1.98mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 34ns/54ns Test Condition: 480V, 60A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock298 More on Order
IRG4PSC71UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 350W Switching Energy: 3.26mJ (on), 2.27mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 90ns/245ns Test Condition: 480V, 60A, 5Ohm, 15V Reverse Recovery Time (trr): 82ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock860 More on Order
IRG4PSC71UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 85A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A Power - Max: 350W Switching Energy: 420µJ (on), 1.99mJ (off) Input Type: Standard Gate Charge: 340nC Td (on/off) @ 25°C: 34ns/56ns Test Condition: 480V, 60A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock165 More on Order
IRG4PSH71KD Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 78A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 5.68mJ (on), 3.23mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25°C: 67ns/230ns Test Condition: 800V, 42A, 5Ohm, 15V Reverse Recovery Time (trr): 107ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock273 More on Order
IRG4PSH71KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 78A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 5.68mJ (on), 3.23mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25°C: 67ns/230ns Test Condition: 800V, 42A, 5Ohm, 15V Reverse Recovery Time (trr): 107ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock503 More on Order
IRG4PSH71KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 78A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 156A Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A Power - Max: 350W Switching Energy: 2.35mJ (on), 3.14mJ (off) Input Type: Standard Gate Charge: 410nC Td (on/off) @ 25°C: 45ns/220ns Test Condition: 960V, 42A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock366 More on Order
IRG4PSH71U Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 99A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 99A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Power - Max: 350W Switching Energy: 4.77mJ (on), 9.54mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 51ns/280ns Test Condition: 960V, 70A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock498 More on Order
IRG4PSH71UD Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 99A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 99A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Power - Max: 350W Switching Energy: 8.8mJ (on), 9.4mJ (off) Input Type: Standard Gate Charge: 380nC Td (on/off) @ 25°C: 46ns/250ns Test Condition: 960V, 70A, 5Ohm, 15V Reverse Recovery Time (trr): 110ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock413 More on Order
IRG4PSH71UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 99A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 99A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Power - Max: 350W Switching Energy: 8.8mJ (on), 9.4mJ (off) Input Type: Standard Gate Charge: 380nC Td (on/off) @ 25°C: 46ns/250ns Test Condition: 960V, 70A, 5Ohm, 15V Reverse Recovery Time (trr): 110ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock485 More on Order
IRG4PSH71UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 99A 350W SUPER247 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 99A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 70A Power - Max: 350W Switching Energy: 4.77mJ (on), 9.54mJ (off) Input Type: Standard Gate Charge: 370nC Td (on/off) @ 25°C: 51ns/280ns Test Condition: 960V, 70A, 5Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-274AA Supplier Device Package: SUPER-247™ (TO-274AA)	In Stock235 More on Order
IRG4RC10K Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock437 More on Order
IRG4RC10KD Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 250µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 49ns/97ns Test Condition: 480V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock460 More on Order
IRG4RC10KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 250µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 49ns/97ns Test Condition: 480V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock477 More on Order
IRG4RC10KDTRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 250µJ (on), 140µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 49ns/97ns Test Condition: 480V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 28ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock367 More on Order
IRG4RC10KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock323 More on Order
IRG4RC10KTR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock119 More on Order
IRG4RC10KTRL Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock137 More on Order
IRG4RC10KTRR Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 9A 38W DPAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 9A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A Power - Max: 38W Switching Energy: 160µJ (on), 100µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 11ns/51ns Test Condition: 480V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock431 More on Order

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