Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
Bipolar (BJT) - Single, Pre-Biased (3,282)
FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
IGBTs - Modules (2,367)
IGBTs - Single (3,305)
JFETs (664)
Programmable Unijunction (26)
Special Purpose (162)

Records 64,903

Page 2066/2164

Part Number	Description	In Stock
IRG7CH73UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock395 More on Order
IRG7CH73UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Input Type: Standard Gate Charge: 540nC Td (on/off) @ 25°C: 90ns/580ns Test Condition: 600V, 75A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock148 More on Order
IRG7CH75K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock363 More on Order
IRG7CH75K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 1.53V @ 15V, 20A Input Type: Standard Gate Charge: 500nC Td (on/off) @ 25°C: 120ns/445ns Test Condition: 600V, 100A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock283 More on Order
IRG7CH75UED-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock106 More on Order
IRG7CH75UEF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Input Type: Standard Gate Charge: 770nC Td (on/off) @ 25°C: 120ns/890ns Test Condition: 600V, 100A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock310 More on Order
IRG7CH81K10EF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock415 More on Order
IRG7CH81K10EF-R Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A Input Type: Standard Gate Charge: 745nC Td (on/off) @ 25°C: 70ns/330ns Test Condition: 600V, 150A, 1Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock236 More on Order
IRG7PG35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock315 More on Order
IRG7PG35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 55A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock378 More on Order
IRG7PG42UD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock308 More on Order
IRG7PG42UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1000V 85A 320W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 90A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 320W Switching Energy: 2.11mJ (on), 1.18mJ (off) Input Type: Standard Gate Charge: 157nC Td (on/off) @ 25°C: 25ns/229ns Test Condition: 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 153ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock234 More on Order
IRG7PH28UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock500 More on Order
IRG7PH28UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 115W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 100A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Power - Max: 115W Switching Energy: 543µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: -/229ns Test Condition: 600V, 15A, 22Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock388 More on Order
IRG7PH28UEF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A TO247 Manufacturer: Infineon Technologies	In Stock479 More on Order
IRG7PH30K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 180W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 180W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock154 More on Order
IRG7PH30K10PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 33A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 27A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 9A Power - Max: 210W Switching Energy: 530µJ (on), 380µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 14ns/110ns Test Condition: 600V, 9A, 22Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock486 More on Order
IRG7PH35UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock289 More on Order
IRG7PH35UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock416 More on Order
IRG7PH35UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 179W TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 150A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 179W Switching Energy: 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: -/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock129 More on Order
IRG7PH35UD-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A COPAK247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock368 More on Order
IRG7PH35UDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 50A 180W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 180W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr): 105ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock469 More on Order
IRG7PH35U-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A TO247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock439 More on Order
IRG7PH35U-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST TO247 Manufacturer: Infineon Technologies Series: *	In Stock412 More on Order
IRG7PH35UPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 55A 210W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620µJ (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 30ns/160ns Test Condition: 600V, 20A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock453 More on Order
IRG7PH37K10D-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock400 More on Order
IRG7PH37K10DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 45A 216W TO247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Power - Max: 216W Switching Energy: 1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 50ns/240ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 120ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock253 More on Order
IRG7PH42UD1-EP Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A COPAK247 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock360 More on Order
IRG7PH42UD1MPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AD Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 270nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock198 More on Order
IRG7PH42UD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 85A 313W TO247AC Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 85A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Power - Max: 313W Switching Energy: 1.21mJ (off) Input Type: Standard Gate Charge: 180nC Td (on/off) @ 25°C: -/270ns Test Condition: 600V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock432 More on Order

«
‹
1
...
2063
2064
2065
2066 (current)
2067
2068
2069
...
2164
›
»