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Part Number	Description	In Stock
IRG8CH137K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 150A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 150A Input Type: Standard Gate Charge: 820nC Td (on/off) @ 25°C: 115ns/570ns Test Condition: 600V, 150A, 2Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock173 More on Order
IRG8CH15K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock485 More on Order
IRG8CH15K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock143 More on Order
IRG8CH184K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 200A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A Input Type: Standard Gate Charge: 1110nC Td (on/off) @ 25°C: 135ns/640ns Test Condition: 600V, 200A, 2Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock495 More on Order
IRG8CH20K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock449 More on Order
IRG8CH20K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock159 More on Order
IRG8CH29K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Series: *	In Stock465 More on Order
IRG8CH29K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V ULTRA FAST DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Input Type: Standard Gate Charge: 160nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock183 More on Order
IRG8CH37K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Input Type: Standard Gate Charge: 210nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V	In Stock484 More on Order
IRG8CH42K10D Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A DIE Manufacturer: Infineon Technologies Series: *	In Stock239 More on Order
IRG8CH42K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Input Type: Standard Gate Charge: 230nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock234 More on Order
IRG8CH50K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Input Type: Standard Gate Charge: 245nC Td (on/off) @ 25°C: 60ns/285ns Test Condition: 600V, 50A, 5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock157 More on Order
IRG8CH76K10F Infineon Technologies	Transistors - IGBTs - Single IGBT CHIP WAFER Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A Input Type: Standard Gate Charge: 480nC Td (on/off) @ 25°C: 80ns/210ns Test Condition: 600V, 75A, 1.5Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock182 More on Order
IRG8CH97K10F Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A DIE Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A Input Type: Standard Gate Charge: 600nC Td (on/off) @ 25°C: 100ns/230ns Test Condition: 600V, 100A, 1Ohm, 15V Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	In Stock206 More on Order
IRG8P08N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A 89W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock304 More on Order
IRG8P08N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 15A 89W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 15A Current - Collector Pulsed (Icm): 15A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A Power - Max: 89W Switching Energy: 300µJ (on), 300µJ (off) Input Type: Standard Gate Charge: 45nC Td (on/off) @ 25°C: 20ns/160ns Test Condition: 600V, 5A, 47Ohm, 15V Reverse Recovery Time (trr): 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock296 More on Order
IRG8P15N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 125W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock127 More on Order
IRG8P15N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 30A 125W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 30A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Power - Max: 125W Switching Energy: 600µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 98nC Td (on/off) @ 25°C: 15ns/170ns Test Condition: 600V, 10A, 10Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock157 More on Order
IRG8P25N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 180W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 180W Switching Energy: 800µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock112 More on Order
IRG8P25N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 40A 180W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Power - Max: 180W Switching Energy: 800µJ (on), 900µJ (off) Input Type: Standard Gate Charge: 135nC Td (on/off) @ 25°C: 20ns/170ns Test Condition: 600V, 15A, 10Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock139 More on Order
IRG8P40N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 305W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock400 More on Order
IRG8P40N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 60A 305W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 75A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Power - Max: 305W Switching Energy: 1.6mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 240nC Td (on/off) @ 25°C: 40ns/245ns Test Condition: 600V, 25A, 10Ohm, 15V Reverse Recovery Time (trr): 80ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock213 More on Order
IRG8P45N65UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 45A CO-PAK-247 Manufacturer: Infineon Technologies Series: *	In Stock241 More on Order
IRG8P45N65UD1PBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 45A CO-PAK-247 Manufacturer: Infineon Technologies Series: *	In Stock261 More on Order
IRG8P50N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 305W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 350W Switching Energy: 2.3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock158 More on Order
IRG8P50N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 80A 305W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 105A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Power - Max: 350W Switching Energy: 2.3mJ (on), 1.9mJ (off) Input Type: Standard Gate Charge: 315nC Td (on/off) @ 25°C: 35ns/190ns Test Condition: 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock319 More on Order
IRG8P60N120KD-EPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A 420W TO-247AD Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 420W Switching Energy: 2.8mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	In Stock158 More on Order
IRG8P60N120KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 1200V 100A 420W TO-247AC Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Power - Max: 420W Switching Energy: 2.8mJ (on), 2.3mJ (off) Input Type: Standard Gate Charge: 345nC Td (on/off) @ 25°C: 40ns/240ns Test Condition: 600V, 40A, 5Ohm, 15V Reverse Recovery Time (trr): 210ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	In Stock104 More on Order
IRG8P75N65UD1-EPBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 75A CO-PAK-247 Manufacturer: Infineon Technologies	In Stock437 More on Order
IRG8P75N65UD1PBF Infineon Technologies	Transistors - IGBTs - Single G8 650V 75A CO-PAK-247 Manufacturer: Infineon Technologies	In Stock374 More on Order

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