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Transistors

Records 64,903
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Part Number
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2SA1776TV2Q
2SA1776TV2Q

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 400V 0.5A ATV

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 3-SIP
  • Supplier Device Package: ATV
In Stock373

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2SA1790JCL
2SA1790JCL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 20V 0.03A SSMINI-3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
In Stock3,784

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2SA1791GRL
2SA1791GRL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 0.05A SSMINI-3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3
In Stock252

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2SA1791JRL
2SA1791JRL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 0.05A SSMINI-3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
  • Power - Max: 125mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
In Stock446

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2SA1797-P-AP
2SA1797-P-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANSISTOR TO-92 MOD

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
In Stock373

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2SA1797T100P
2SA1797T100P

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 2A SOT-89

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
In Stock183

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2SA1797T100Q
2SA1797T100Q

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 2A SOT-89

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
In Stock1,956

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2SA1806GRL
2SA1806GRL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 15V 0.05A SSMINI-3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V
  • Power - Max: 125mW
  • Frequency - Transition: 1.5GHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3
In Stock121

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2SA1806JRL
2SA1806JRL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single

TRANS PNP 15V 0.05A SSMINI-3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 1V
  • Power - Max: 125mW
  • Frequency - Transition: 1.5GHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F1
In Stock190

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2SA1807TLP
2SA1807TLP

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 600V 1A TO252

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 60mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: CPT3
In Stock228

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2SA1812T100Q
2SA1812T100Q

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 400V 0.5A SOT-89

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 12MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: MPT3
In Stock191

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2SA1827S-AY
2SA1827S-AY

ON Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 100V 4A FLP

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
  • Power - Max: 1.5W
  • Frequency - Transition: 180MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 No Tab
  • Supplier Device Package: FLP
In Stock347

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2SA1832-GR,LF
2SA1832-GR,LF

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 0.15A SSM

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
In Stock349

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2SA1832-Y-AP
2SA1832-Y-AP

Micro Commercial Co

Transistors - Bipolar (BJT) - Single

TRANSISTOR TO-92 MOD

  • Manufacturer: Micro Commercial Co
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
In Stock407

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2SA1832-Y,LF
2SA1832-Y,LF

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 50V 0.15A SSM

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
In Stock129

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2SA1834TLR
2SA1834TLR

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 20V 10A SOT-428

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: CPT3
In Stock9,863

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2SA1834TLS
2SA1834TLS

Rohm Semiconductor

Transistors - Bipolar (BJT) - Single

TRANS PNP 20V 10A SOT-428 TR

  • Manufacturer: Rohm Semiconductor
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 4A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: CPT3
In Stock104

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2SA1836-T1-A
2SA1836-T1-A

Renesas Electronics America

Transistors - Bipolar (BJT) - Single

TRANSISTOR PNP USM SC-75

  • Manufacturer: Renesas Electronics America
In Stock458

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2SA1837,F(J
2SA1837,F(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock232

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2SA1837(F,M)
2SA1837(F,M)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 230V 1A TO220NIS

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock10,005

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2SA1837,HFEMBJF(J
2SA1837,HFEMBJF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock123

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2SA1837,HFEYHF(J
2SA1837,HFEYHF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock358

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2SA1837,HFEYHF(M
2SA1837,HFEYHF(M

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock304

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2SA1837(LBSAN,F,M)
2SA1837(LBSAN,F,M)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock257

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2SA1837,NSEIKIF(J
2SA1837,NSEIKIF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock116

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2SA1837(PAIO,F,M)
2SA1837(PAIO,F,M)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock424

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2SA1837,S1CSF(J
2SA1837,S1CSF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock167

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2SA1837,TOA1F(J
2SA1837,TOA1F(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock130

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2SA1837,WNLF(J
2SA1837,WNLF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock102

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2SA1837,YHF(J
2SA1837,YHF(J

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single

TRANS PNP 1A 230V TO220-3

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 230V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
  • Power - Max: 2W
  • Frequency - Transition: 70MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NIS
In Stock165

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