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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 208/2164

Part Number	Description	In Stock
2SA1837,YHF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 1A 230V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 70MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock394 More on Order
2SA1859 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 150V 2A TO220F Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V Power - Max: 20W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock8,478 More on Order
2SA1859A Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 180V 2A TO220F Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 70mA, 700mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 700mA, 10V Power - Max: 20W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220F	In Stock3,922 More on Order
2SA1860 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 150V 14A TO-3PF Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 14A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 80W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock905 More on Order
2SA1862TLP Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 400V 2A SOT-428 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 400V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Power - Max: 1W Frequency - Transition: 18MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPT3	In Stock207 More on Order
2SA1869-Y(JKT,Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock485 More on Order
2SA1869-Y,MTSAQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock449 More on Order
2SA1869-Y,Q(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock133 More on Order
2SA1869-Y(Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 3A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock202 More on Order
2SA1871-T1-AZ Renesas Electronics America	Transistors - Bipolar (BJT) - Single TRANSISTOR Manufacturer: Renesas Electronics America	In Stock476 More on Order
2SA1887(F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 10A TO220NIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 2W Frequency - Transition: 45MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock452 More on Order
2SA18900RL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A MINI PWR Manufacturer: Panasonic Electronic Components Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F1	In Stock246 More on Order
2SA1890GRL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 1A MINIP-3 Manufacturer: Panasonic Electronic Components Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MiniP3-F2	In Stock327 More on Order
2SA1900T100Q Rohm Semiconductor	Transistors - Bipolar (BJT) - Single TRANS PNP 50V 1A SO-89 Manufacturer: Rohm Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 3V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: MPT3	In Stock408 More on Order
2SA1907 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 80V 6A TO3PF Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 6A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 12A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 4V Power - Max: 60W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock403 More on Order
2SA1908 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 120V 8A TO3PF Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 8A Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 500mV @ 300mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 75W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock546 More on Order
2SA1909 Sanken	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 10A TO3PF Manufacturer: Sanken Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 500mV @ 500mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3A, 4V Power - Max: 80W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-3PF	In Stock609 More on Order
2SA1930,CKQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock296 More on Order
2SA1930,LBS2DIAQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock389 More on Order
2SA1930(LBS2MATQ,M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock490 More on Order
2SA1930,ONKQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock375 More on Order
2SA1930(ONK,Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock225 More on Order
2SA1930,Q(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 2A 180V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock262 More on Order
2SA1930(Q,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 180V 2A TO220NIS Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock198 More on Order
2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock431 More on Order
2SA1931,KEHINQ(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock336 More on Order
2SA1931,NETQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock407 More on Order
2SA1931,NETQ(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock197 More on Order
2SA1931,NIKKIQ(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock469 More on Order
2SA1931(NOMARK,A,Q Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS PNP 5A 50V TO220-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: PNP Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Power - Max: 2W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	In Stock116 More on Order

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