Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
Bipolar (BJT) - Single, Pre-Biased (3,282)
FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
IGBTs - Modules (2,367)
IGBTs - Single (3,305)
JFETs (664)
Programmable Unijunction (26)
Special Purpose (162)

Records 64,903

Page 2076/2164

Part Number	Description	In Stock
IRGS15B60KDTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 208W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock114 More on Order
IRGS15B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 208W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock284 More on Order
IRGS30B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock298 More on Order
IRGS30B60KTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock1,768 More on Order
IRGS4045DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock479 More on Order
IRGS4045DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock397 More on Order
IRGS4045DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 12A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 19.5nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock340 More on Order
IRGS4055PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 300V 110A 255W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 110A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A Power - Max: 255W Input Type: Standard Gate Charge: 132nC Td (on/off) @ 25°C: 44ns/245ns Test Condition: 180V, 35A, 10Ohm Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock213 More on Order
IRGS4056DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 24A 140W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 24A Current - Collector Pulsed (Icm): 48A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock119 More on Order
IRGS4062DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 48A 250W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock254 More on Order
IRGS4062DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT DISCRETES Manufacturer: Infineon Technologies Series: * Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK (TO-263AB)	In Stock496 More on Order
IRGS4064DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 20A 101W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A Power - Max: 101W Switching Energy: 29µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 27ns/79ns Test Condition: 400V, 10A, 22Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock226 More on Order
IRGS4064DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 20A 101W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A Power - Max: 101W Switching Energy: 29µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 27ns/79ns Test Condition: 400V, 10A, 22Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock283 More on Order
IRGS4064DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 20A 101W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 20A Current - Collector Pulsed (Icm): 40A Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A Power - Max: 101W Switching Energy: 29µJ (on), 200µJ (off) Input Type: Standard Gate Charge: 32nC Td (on/off) @ 25°C: 27ns/79ns Test Condition: 400V, 10A, 22Ohm, 15V Reverse Recovery Time (trr): 62ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D²PAK	In Stock457 More on Order
IRGS4065PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 300V 70A 178W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 70A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A Power - Max: 178W Input Type: Standard Gate Charge: 62nC Td (on/off) @ 25°C: 30ns/170ns Test Condition: 180V, 25A, 10Ohm Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock118 More on Order
IRGS4086PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 300V 70A 160W D2PAK Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 300V Current - Collector (Ic) (Max): 70A Vce(on) (Max) @ Vge, Ic: 2.96V @ 15V, 120A Power - Max: 160W Input Type: Standard Gate Charge: 65nC Td (on/off) @ 25°C: 36ns/112ns Test Condition: 196V, 25A, 10Ohm Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock380 More on Order
IRGS4607DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 58W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 27ns/120ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock257 More on Order
IRGS4607DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 58W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 27ns/120ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock418 More on Order
IRGS4607DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 58W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 12A Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A Power - Max: 58W Switching Energy: 140µJ (on), 62µJ (off) Input Type: Standard Gate Charge: 9nC Td (on/off) @ 25°C: 27ns/120ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 48ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock457 More on Order
IRGS4610DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock328 More on Order
IRGS4610DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock347 More on Order
IRGS4610DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 16A 77W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 16A Current - Collector Pulsed (Icm): 18A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A Power - Max: 77W Switching Energy: 56µJ (on), 122µJ (off) Input Type: Standard Gate Charge: 13nC Td (on/off) @ 25°C: 27ns/75ns Test Condition: 400V, 6A, 47Ohm, 15V Reverse Recovery Time (trr): 74ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock164 More on Order
IRGS4615DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 99W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Power - Max: 99W Switching Energy: 70µJ (on), 145µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 30ns/95ns Test Condition: 400V, 8A, 47Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock406 More on Order
IRGS4615DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 99W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Power - Max: 99W Switching Energy: 70µJ (on), 145µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 30ns/95ns Test Condition: 400V, 8A, 47Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock375 More on Order
IRGS4615DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 23A 99W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 23A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A Power - Max: 99W Switching Energy: 70µJ (on), 145µJ (off) Input Type: Standard Gate Charge: 19nC Td (on/off) @ 25°C: 30ns/95ns Test Condition: 400V, 8A, 47Ohm, 15V Reverse Recovery Time (trr): 60ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock229 More on Order
IRGS4620DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 32A 140W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock107 More on Order
IRGS4620DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 32A 140W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock278 More on Order
IRGS4620DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 32A 140W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 32A Current - Collector Pulsed (Icm): 36A Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A Power - Max: 140W Switching Energy: 75µJ (on), 225µJ (off) Input Type: Standard Gate Charge: 25nC Td (on/off) @ 25°C: 31ns/83ns Test Condition: 400V, 12A, 22Ohm, 15V Reverse Recovery Time (trr): 68ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock477 More on Order
IRGS4630DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 47A 206W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock144 More on Order
IRGS4630DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 47A 206W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock338 More on Order

«
‹
1
...
2073
2074
2075
2076 (current)
2077
2078
2079
...
2164
›
»