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Part Number	Description	In Stock
IRGS4630DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 47A 206W D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 47A Current - Collector Pulsed (Icm): 54A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A Power - Max: 206W Switching Energy: 95µJ (on), 350µJ (off) Input Type: Standard Gate Charge: 35nC Td (on/off) @ 25°C: 40ns/105ns Test Condition: 400V, 18A, 22Ohm, 15V Reverse Recovery Time (trr): 100ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock410 More on Order
IRGS4640DPBF Infineon Technologies	Transistors - IGBTs - Single DIODE 600V 40A D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock376 More on Order
IRGS4640DTRLPBF Infineon Technologies	Transistors - IGBTs - Single DIODE 600V 40A D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock409 More on Order
IRGS4640DTRRPBF Infineon Technologies	Transistors - IGBTs - Single DIODE 600V 24A D2PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock271 More on Order
IRGS4715DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 650V D2-PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Power - Max: 100W Switching Energy: 200µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 30ns/100ns Test Condition: 400V, 8A, 50Ohm, 15V Reverse Recovery Time (trr): 86ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock353 More on Order
IRGS4715DTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 650V D2-PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Power - Max: 100W Switching Energy: 200µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 30ns/100ns Test Condition: 400V, 8A, 50Ohm, 15V Reverse Recovery Time (trr): 86ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock208 More on Order
IRGS4715DTRRPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 650V D2-PAK Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 21A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Power - Max: 100W Switching Energy: 200µJ (on), 90µJ (off) Input Type: Standard Gate Charge: 30nC Td (on/off) @ 25°C: 30ns/100ns Test Condition: 400V, 8A, 50Ohm, 15V Reverse Recovery Time (trr): 86ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock367 More on Order
IRGS4B60KD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 93ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock331 More on Order
IRGS4B60KD1TRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 93ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock428 More on Order
IRGS4B60KD1TRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 93ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock178 More on Order
IRGS4B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V D2PAK-3 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 12A Current - Collector Pulsed (Icm): 24A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock234 More on Order
IRGS6B60KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock384 More on Order
IRGS6B60KDTRLP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock128 More on Order
IRGS6B60KDTRRP Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock132 More on Order
IRGS6B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock324 More on Order
IRGS6B60KTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock198 More on Order
IRGS8B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 167W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Power - Max: 167W Switching Energy: 160µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 29nC Td (on/off) @ 25°C: 23ns/140ns Test Condition: 400V, 8A, 50Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock194 More on Order
IRGS8B60KTRLPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 28A 167W D2PAK Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 28A Current - Collector Pulsed (Icm): 34A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Power - Max: 167W Switching Energy: 160µJ (on), 160µJ (off) Input Type: Standard Gate Charge: 29nC Td (on/off) @ 25°C: 23ns/140ns Test Condition: 400V, 8A, 50Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK	In Stock155 More on Order
IRGSL10B60KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 22A 156W TO220-3 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 22A Current - Collector Pulsed (Icm): 44A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 10A Power - Max: 156W Switching Energy: 140µJ (on), 250µJ (off) Input Type: Standard Gate Charge: 38nC Td (on/off) @ 25°C: 30ns/230ns Test Condition: 400V, 10A, 47Ohm, 15V Reverse Recovery Time (trr): 90ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock210 More on Order
IRGSL14C40LPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 430V 20A 125W TO262AA Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 20A Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A Power - Max: 125W Input Type: Logic Gate Charge: 27nC Td (on/off) @ 25°C: 900ns/6µs Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock291 More on Order
IRGSL15B60KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 31A 208W TO262 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 31A Current - Collector Pulsed (Icm): 62A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 208W Switching Energy: 220µJ (on), 340µJ (off) Input Type: Standard Gate Charge: 56nC Td (on/off) @ 25°C: 34ns/184ns Test Condition: 400V, 15A, 22Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: PG-TO262-3	In Stock175 More on Order
IRGSL30B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 78A 370W TO262 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Power - Max: 370W Switching Energy: 350µJ (on), 825µJ (off) Input Type: Standard Gate Charge: 102nC Td (on/off) @ 25°C: 46ns/185ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock447 More on Order
IRGSL4062DPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 48A 250W TO262 Manufacturer: Infineon Technologies IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 48A Current - Collector Pulsed (Icm): 96A Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 50nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock378 More on Order
IRGSL4640DPBF Infineon Technologies	Transistors - IGBTs - Single DIODE 600V 24A COPAK-262 Manufacturer: Infineon Technologies Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 65A Current - Collector Pulsed (Icm): 72A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A Power - Max: 250W Switching Energy: 115µJ (on), 600µJ (off) Input Type: Standard Gate Charge: 75nC Td (on/off) @ 25°C: 41ns/104ns Test Condition: 400V, 24A, 10Ohm, 15V Reverse Recovery Time (trr): 89ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock402 More on Order
IRGSL4B60KD1PBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 11A 63W TO262 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 11A Current - Collector Pulsed (Icm): 22A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A Power - Max: 63W Switching Energy: 73µJ (on), 47µJ (off) Input Type: Standard Gate Charge: 12nC Td (on/off) @ 25°C: 22ns/100ns Test Condition: 400V, 4A, 100Ohm, 15V Reverse Recovery Time (trr): 93ns Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock414 More on Order
IRGSL6B60KDPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W TO262 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Reverse Recovery Time (trr): 70ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock261 More on Order
IRGSL6B60KPBF Infineon Technologies	Transistors - IGBTs - Single IGBT 600V 13A 90W TO262 Manufacturer: Infineon Technologies IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 13A Current - Collector Pulsed (Icm): 26A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Power - Max: 90W Switching Energy: 110µJ (on), 135µJ (off) Input Type: Standard Gate Charge: 18.2nC Td (on/off) @ 25°C: 25ns/215ns Test Condition: 400V, 5A, 100Ohm, 15V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262	In Stock336 More on Order
ISL9V2040D3S ON Semiconductor	Transistors - IGBTs - Single IGBT 430V 10A 130W TO252AA Manufacturer: ON Semiconductor Series: EcoSPARK® Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 10A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A Power - Max: 130W Input Type: Logic Gate Charge: 12nC Td (on/off) @ 25°C: -/3.64µs Test Condition: 300V, 1kOhm, 5V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock205 More on Order
ISL9V2040D3ST ON Semiconductor	Transistors - IGBTs - Single IGBT 430V 10A 130W TO252AA Manufacturer: ON Semiconductor Series: EcoSPARK® Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 10A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A Power - Max: 130W Input Type: Logic Gate Charge: 12nC Td (on/off) @ 25°C: -/3.64µs Test Condition: 300V, 1kOhm, 5V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA	In Stock138 More on Order
ISL9V2040P3 ON Semiconductor	Transistors - IGBTs - Single IGBT 430V 10A 130W TO220AB Manufacturer: ON Semiconductor Series: EcoSPARK® Voltage - Collector Emitter Breakdown (Max): 430V Current - Collector (Ic) (Max): 10A Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A Power - Max: 130W Input Type: Logic Gate Charge: 12nC Td (on/off) @ 25°C: -/3.64µs Test Condition: 300V, 1kOhm, 5V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3	In Stock363 More on Order

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