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Transistors

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Part Number
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NGTD21T65F2SWK
NGTD21T65F2SWK

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 650V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock316

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NGTD21T65F2WP
NGTD21T65F2WP

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 650V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 45A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock147

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NGTD23T120F2SWK
NGTD23T120F2SWK

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock478

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NGTD23T120F2WP
NGTD23T120F2WP

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock326

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NGTD28T65F2SWK
NGTD28T65F2SWK

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 650V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock204

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NGTD28T65F2WP
NGTD28T65F2WP

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 650V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock372

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NGTD30T120F2SWK
NGTD30T120F2SWK

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock233

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NGTD30T120F2WP
NGTD30T120F2WP

ON Semiconductor

Transistors - IGBTs - Single

IGBT TRENCH FIELD STOP 1200V DIE

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Input Type: Standard
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock257

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NGTG12N60TF1G
NGTG12N60TF1G

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 24A 54W TO-3PF

  • Manufacturer: ON Semiconductor
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 88A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 12A
  • Power - Max: 54W
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 55ns/200ns
  • Test Condition: 300V, 15A, 30Ohm, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
In Stock624

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NGTG15N120FL2WG
NGTG15N120FL2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 15A TO-247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
  • Power - Max: 294W
  • Switching Energy: 1.2mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 109nC
  • Td (on/off) @ 25°C: 64ns/128ns
  • Test Condition: 600V, 15A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
In Stock212

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NGTG15N60S1EG
NGTG15N60S1EG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 30A 117W TO220-3

  • Manufacturer: ON Semiconductor
  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
  • Power - Max: 117W
  • Switching Energy: 550µJ (on), 350µJ (off)
  • Input Type: Standard
  • Gate Charge: 88nC
  • Td (on/off) @ 25°C: 65ns/170ns
  • Test Condition: 400V, 15A, 22Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
In Stock3,291

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NGTG20N60L2TF1G
NGTG20N60L2TF1G

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 40A 64W TO-3PF

  • Manufacturer: ON Semiconductor
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
  • Power - Max: 64W
  • Input Type: Standard
  • Gate Charge: 84nC
  • Td (on/off) @ 25°C: 60ns/193ns
  • Test Condition: 300V, 20A, 30Ohm, 15V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
In Stock617

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NGTG25N120FL2WG
NGTG25N120FL2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 25A TO-247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 385W
  • Switching Energy: 1.95mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 178nC
  • Td (on/off) @ 25°C: 87ns/179ns
  • Test Condition: 600V, 25A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
In Stock308

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NGTG30N60FLWG
NGTG30N60FLWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 250W TO247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
  • Power - Max: 250W
  • Switching Energy: 700µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 83ns/170ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
In Stock196

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NGTG30N60FWG
NGTG30N60FWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 60A 167W TO247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 167W
  • Switching Energy: 650µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 81ns/190ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
In Stock261

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NGTG35N65FL2WG
NGTG35N65FL2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 650V 60A 167W TO247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
  • Power - Max: 300W
  • Switching Energy: 840µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 125nC
  • Td (on/off) @ 25°C: 72ns/132ns
  • Test Condition: 400V, 35A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
In Stock357

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NGTG40N120FL2WG
NGTG40N120FL2WG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 1200V 40A TO-247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 3.4mJ (on), 1.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 313nC
  • Td (on/off) @ 25°C: 116ns/286ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
In Stock343

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NGTG50N60FLWG
NGTG50N60FLWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 50A TO247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 116ns/292ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
In Stock198

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NGTG50N60FWG
NGTG50N60FWG

ON Semiconductor

Transistors - IGBTs - Single

IGBT 600V 100A 223W TO247

  • Manufacturer: ON Semiconductor
  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 223W
  • Switching Energy: 1.1mJ (on), 1.2mJ (off)
  • Input Type: Standard
  • Gate Charge: 310nC
  • Td (on/off) @ 25°C: 117ns/285ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
In Stock392

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RGC80TSX8RGC11
RGC80TSX8RGC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1800V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
  • Power - Max: 535W
  • Switching Energy: 1.85mJ (on), 1.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 468nC
  • Td (on/off) @ 25°C: 80ns/565ns
  • Test Condition: 600V, 40A, 10Ohm, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
In Stock392

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RGCL60TK60DGC11
RGCL60TK60DGC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 54W
  • Switching Energy: 770µJ (on), 1.11mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 44ns/186ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
In Stock701

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RGCL60TK60GC11
RGCL60TK60GC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 54W
  • Switching Energy: 770µJ (on), 1.11mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 44ns/186ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
In Stock461

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RGCL60TS60DGC11
RGCL60TS60DGC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 111W
  • Switching Energy: 770µJ (on), 1.11mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 44ns/186ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
In Stock744

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RGCL60TS60GC11
RGCL60TS60GC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
  • Power - Max: 111W
  • Switching Energy: 770µJ (on), 1.11mJ (off)
  • Input Type: Standard
  • Gate Charge: 68nC
  • Td (on/off) @ 25°C: 44ns/186ns
  • Test Condition: 400V, 30A, 10Ohm, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
In Stock740

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RGCL80TK60DGC11
RGCL80TK60DGC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 57W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
In Stock716

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RGCL80TK60GC11
RGCL80TK60GC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 57W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PFM, SC-93-3
  • Supplier Device Package: TO-3PFM
In Stock796

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RGCL80TS60DGC11
RGCL80TS60DGC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 58ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
In Stock854

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RGCL80TS60GC11
RGCL80TS60GC11

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
  • Power - Max: 148W
  • Switching Energy: 1.11mJ (on), 1.68mJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 53ns/227ns
  • Test Condition: 400V, 40A, 10Ohm, 15V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
In Stock705

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RGPR10BM40FHTL
RGPR10BM40FHTL

Rohm Semiconductor

Transistors - IGBTs - Single

IGBT

  • Manufacturer: Rohm Semiconductor
  • Series: Automotive, AEC-Q101
  • Voltage - Collector Emitter Breakdown (Max): 460V
  • Current - Collector (Ic) (Max): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 107W
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Operating Temperature: -40°C ~ 75°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252
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RGPR20NS43HRTL
RGPR20NS43HRTL

Rohm Semiconductor

Transistors - IGBTs - Single

430V 20A IGNITION IGBT

  • Manufacturer: Rohm Semiconductor
  • Series: Automotive, AEC-Q101
  • Voltage - Collector Emitter Breakdown (Max): 460V
  • Current - Collector (Ic) (Max): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.0V @ 5V, 10A
  • Power - Max: 107W
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 500ns/4µs
  • Test Condition: 300V, 8A, 100Ohm, 5V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: LPDS
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