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Records 64,903

Page 2115/2164

Part Number	Description	In Stock
RGTV00TK65GVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 94W Switching Energy: 1.17mJ (on), 940µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 41ns/142ns Test Condition: 400V, 50A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock877 More on Order
RGTV00TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 95A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 276W Switching Energy: 1.17mJ (on), 940µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 41ns/142ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 102ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock806 More on Order
RGTV00TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 95A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 276W Switching Energy: 1.17mJ (on), 940µJ (off) Input Type: Standard Gate Charge: 104nC Td (on/off) @ 25°C: 41ns/142ns Test Condition: 400V, 50A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock804 More on Order
RGTV60TK65DGVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 76W Switching Energy: 570µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 33ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock655 More on Order
RGTV60TK65GVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 76W Switching Energy: 570µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 33ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock946 More on Order
RGTV60TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 194W Switching Energy: 570µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 33ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock886 More on Order
RGTV60TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 194W Switching Energy: 570µJ (on), 500µJ (off) Input Type: Standard Gate Charge: 64nC Td (on/off) @ 25°C: 33ns/105ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock666 More on Order
RGTVX6TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 144A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Power - Max: 404W Switching Energy: 2.65mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 171nC Td (on/off) @ 25°C: 45ns/201ns Test Condition: 400V, 80A, 10Ohm, 15V Reverse Recovery Time (trr): 109ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock156 More on Order
RGTVX6TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 80A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 144A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 80A Power - Max: 404W Switching Energy: 2.65mJ (on), 1.8mJ (off) Input Type: Standard Gate Charge: 171nC Td (on/off) @ 25°C: 45ns/201ns Test Condition: 400V, 80A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock674 More on Order
RGW00TK65DGVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 89W Switching Energy: 1.18mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 141nC Td (on/off) @ 25°C: 52ns/180ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock926 More on Order
RGW00TK65GVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 45A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 89W Switching Energy: 1.18mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 141nC Td (on/off) @ 25°C: 52ns/180ns Test Condition: 400V, 50A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock689 More on Order
RGW00TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 254W Switching Energy: 1.18mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 141nC Td (on/off) @ 25°C: 52ns/180ns Test Condition: 400V, 50A, 10Ohm, 15V Reverse Recovery Time (trr): 95ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock761 More on Order
RGW00TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 50A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 96A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 254W Switching Energy: 1.18mJ (on), 960µJ (off) Input Type: Standard Gate Charge: 141nC Td (on/off) @ 25°C: 52ns/180ns Test Condition: 400V, 50A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock883 More on Order
RGW60TK65DGVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 72W Switching Energy: 480µJ (on), 490µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 37ns/114ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock849 More on Order
RGW60TK65GVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 33A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 72W Switching Energy: 480µJ (on), 490µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 37ns/114ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock665 More on Order
RGW60TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 178W Switching Energy: 480µJ (on), 490µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 37ns/114ns Test Condition: 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock914 More on Order
RGW60TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 30A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Power - Max: 178W Switching Energy: 480µJ (on), 490µJ (off) Input Type: Standard Gate Charge: 84nC Td (on/off) @ 25°C: 37ns/114ns Test Condition: 400V, 30A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock771 More on Order
RGW80TK65DGVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 40A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 39A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 81W Switching Energy: 760µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 44ns/143ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock816 More on Order
RGW80TK65GVC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 40A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 39A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 81W Switching Energy: 760µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 44ns/143ns Test Condition: 400V, 40A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3PFM, SC-93-3 Supplier Device Package: TO-3PFM	In Stock861 More on Order
RGW80TS65DGC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 40A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 214W Switching Energy: 760µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 44ns/143ns Test Condition: 400V, 40A, 10Ohm, 15V Reverse Recovery Time (trr): 92ns Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock701 More on Order
RGW80TS65GC11 Rohm Semiconductor	Transistors - IGBTs - Single 650V 40A FIELD STOP TRENCH IGBT Manufacturer: Rohm Semiconductor IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 78A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Power - Max: 214W Switching Energy: 760µJ (on), 720µJ (off) Input Type: Standard Gate Charge: 110nC Td (on/off) @ 25°C: 44ns/143ns Test Condition: 400V, 40A, 10Ohm, 15V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247N	In Stock902 More on Order
RJH1BF6RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1100V 55A 227.2W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1100V Current - Collector (Ic) (Max): 55A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A Power - Max: 227.2W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock271 More on Order
RJH1BF7RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1100V 60A 250W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1100V Current - Collector (Ic) (Max): 60A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 60A Power - Max: 250W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock454 More on Order
RJH1BG7RDPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1100V 60A 250W TO247 Manufacturer: Renesas Electronics America	In Stock448 More on Order
RJH1CF4RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 40A 156.2W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 40A Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Power - Max: 156.2W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock333 More on Order
RJH1CF5RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 50A 192.3W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Power - Max: 192.3W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock331 More on Order
RJH1CF6RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 55A 227.2W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 55A Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Power - Max: 227.2W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock292 More on Order
RJH1CF7RDPQ-80#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 60A 250W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A Power - Max: 250W Input Type: Standard Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3	In Stock230 More on Order
RJH1CM5DPQ-E0#T2 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 30A 245W TO247 Manufacturer: Renesas Electronics America Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A Power - Max: 245W Switching Energy: 1.6mJ (on), 700µJ (off) Input Type: Standard Gate Charge: 74nC Td (on/off) @ 25°C: 40ns/100ns Test Condition: 600V, 15A, 5Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	In Stock344 More on Order
RJH1CV5DPK-00#T0 Renesas Electronics America	Transistors - IGBTs - Single IGBT 1200V 50A 245W TO-3P Manufacturer: Renesas Electronics America IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 50A Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 25A Power - Max: 245W Switching Energy: 1.9mJ (on), 1.5mJ (off) Input Type: Standard Gate Charge: 72nC Td (on/off) @ 25°C: 42ns/105ns Test Condition: 600V, 25A, 5Ohm, 15V Reverse Recovery Time (trr): 170ns Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock204 More on Order

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