Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
Bipolar (BJT) - Single, Pre-Biased (3,282)
FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
IGBTs - Modules (2,367)
IGBTs - Single (3,305)
JFETs (664)
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Special Purpose (162)

Records 64,903

Page 231/2164

Part Number	Description	In Stock
2SC24970Q Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 1.5A TO-126 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock163 More on Order
2SC24970R Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 1.5A TO-126 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock243 More on Order
2SC2497AQ Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 1.5A TO-126 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 150mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 1.2W Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock439 More on Order
2SC25900Q Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.5A TO-126 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 30mA, 300mA DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 150mA, 10V Power - Max: 1.2W Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock157 More on Order
2SC26310RA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.05A TO-92 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V Power - Max: 750mW Frequency - Transition: 160MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-B1	In Stock343 More on Order
2SC26320R Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.05A TO-92L Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 10mA, 5V Power - Max: 1W Frequency - Transition: 160MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92L-A1	In Stock378 More on Order
2SC2655L-O-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock308 More on Order
2SC2655L-Y-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock171 More on Order
2SC2655-O-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92MOD	In Stock244 More on Order
2SC2655-O,F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock210 More on Order
2SC2655-O(ND1,AF) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock238 More on Order
2SC2655-O(ND2,AF) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock454 More on Order
2SC2655-O(TE6,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock472 More on Order
2SC2655-Y(6MBH1,AF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock282 More on Order
2SC2655-Y-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Supplier Device Package: TO-92MOD	In Stock371 More on Order
2SC2655-Y,F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock182 More on Order
2SC2655-Y(HIT,F,M) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock146 More on Order
2SC2655-Y,T6APNF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock190 More on Order
2SC2655-Y(T6CANOFM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock394 More on Order
2SC2655-Y(T6CN,A,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock180 More on Order
2SC2655-Y,T6F(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock269 More on Order
2SC2655-Y,T6KEHF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock289 More on Order
2SC2655-Y(T6ND1,AF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock281 More on Order
2SC2655-Y(T6ND2,AF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock425 More on Order
2SC2655-Y(T6ND3,AF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock246 More on Order
2SC2655-Y(T6OMI,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock415 More on Order
2SC2655-Y(T6STL,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock483 More on Order
2SC2655-Y,T6SWFF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock494 More on Order
2SC2655-Y(T6TOJ,FM Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock419 More on Order
2SC2655-Y,T6WNLF(J Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 50V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock353 More on Order

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