Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 233/2164

Part Number	Description	In Stock
2SC3063 Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 0.1A TO-126 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 30mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 50V Power - Max: 1.2W Frequency - Transition: 140MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126B-A1	In Stock382 More on Order
2SC3074-O(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 5A 2-7B1A Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	In Stock437 More on Order
2SC3074-Y(Q) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 5A PW-MOLD Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 1W Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	In Stock476 More on Order
2SC31300QL Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 10V 0.05A MINI-3 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 5mA, 4V Power - Max: 150mW Frequency - Transition: 2.5GHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	In Stock360 More on Order
2SC3138-Y(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 200V 0.05A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 200V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock379 More on Order
2SC3225,T6ALPSF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 40V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 400mA, 1V Power - Max: 900mW Frequency - Transition: 220MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	In Stock471 More on Order
2SC3263 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 230V 15A TO-3P Manufacturer: Sanken Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 4V Power - Max: 130W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock2,342 More on Order
2SC3264 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 230V 17A MT200 Manufacturer: Sanken Transistor Type: NPN Current - Collector (Ic) (Max): 17A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 200W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-ESIP Supplier Device Package: MT-200	In Stock329 More on Order
2SC3265-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 500mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	In Stock327 More on Order
2SC3265-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 25V 0.8A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock396 More on Order
2SC3279-L-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 1V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock246 More on Order
2SC3279-M-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 1V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock120 More on Order
2SC3279-N-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock125 More on Order
2SC3279-P-AP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 10V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V Power - Max: 750mW Frequency - Transition: 150MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92	In Stock354 More on Order
2SC3284 Sanken	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 14A TO3P Manufacturer: Sanken Transistor Type: NPN Current - Collector (Ic) (Max): 14A Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5A, 4V Power - Max: 125W Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P	In Stock484 More on Order
2SC3303-BP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 20MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251	In Stock404 More on Order
2SC3303-O-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANSISTOR TO-92 MOD Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 20MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251	In Stock173 More on Order
2SC3303-Y-TP Micro Commercial Co	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 5A DPAK Manufacturer: Micro Commercial Co Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 1V Power - Max: 1W Frequency - Transition: 20MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak	In Stock408 More on Order
2SC3311A0A Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A NS-B1 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock278 More on Order
2SC3311AQA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A NS-B1 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock471 More on Order
2SC3311ARA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A NS-B1 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock100 More on Order
2SC3311ASA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.1A NS-B1 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 2mA, 10V Power - Max: 300mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock241 More on Order
2SC33120RA Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single TRANS NPN 55V 0.1A NS-B1 Manufacturer: Panasonic Electronic Components Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 55V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: 3-SSIP Supplier Device Package: NS-B1	In Stock7,166 More on Order
2SC3324-BL(TE85L,F Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.1A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock188 More on Order
2SC3324GRTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 120V 0.1A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock353 More on Order
2SC3325-O(TE85L,F) Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock268 More on Order
2SC3325-Y,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Power - Max: 200mW Frequency - Transition: 300MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	In Stock8,229 More on Order
2SC3326-A,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 0.3A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V Power - Max: 150mW Frequency - Transition: 30MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock163,757 More on Order
2SC3326-B,LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 20V 0.3A S-MINI Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 150mW Frequency - Transition: 30MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236	In Stock171 More on Order
2SC3328-O,T6KEHF(M Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single TRANS NPN 2A 80V TO226-3 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	In Stock148 More on Order

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