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Transistors

Records 64,903
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Part Number
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PBSS2515VS,315
PBSS2515VS,315

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 15V 0.5A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 420MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock224

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PBSS2515YPN,115
PBSS2515YPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 15V 0.5A 6TSSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 420MHz, 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
In Stock7,115

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PBSS2515YPN/ZLX
PBSS2515YPN/ZLX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS BISS SC-88

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 250MHz, 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock302

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PBSS3515VS,115
PBSS3515VS,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 15V 0.5A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 2V
  • Power - Max: 200mW
  • Frequency - Transition: 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock24,841

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PBSS4021SN,115
PBSS4021SN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V 7.5A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 7.5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 115MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock1,626

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PBSS4021SP,115
PBSS4021SP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 20V 6.3A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 6.3A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 325mA, 6.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 105MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock238

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PBSS4021SPN,115
PBSS4021SPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 20V 7.5A/6.3A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 7.5A, 6.3A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 375mA, 7.5A / 350mV @ 325mA, 6.5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 4A, 2V / 150 @ 4A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 115MHz, 105MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock310

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PBSS4032SN,115
PBSS4032SN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 30V 5.7A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 5.7A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock473

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PBSS4032SP,115
PBSS4032SP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 30V 4.8A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 4.8A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 510mV @ 250mA, 5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 115MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock2,845

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PBSS4032SPN,115
PBSS4032SPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 30V 5.7A/4.8A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 5.7A, 4.8A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 140MHz, 115MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock200

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PBSS4041SN,115
PBSS4041SN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 6.7A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 6.7A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 130MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock111

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PBSS4041SP,115
PBSS4041SP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 5.9A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 5.9A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 275mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock167

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PBSS4041SPN,115
PBSS4041SPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 6.7A/5.9A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 6.7A, 5.9A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 350mA, 7A / 275mV @ 400mA, 4A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 4A, 2V / 150 @ 2A, 2V
  • Power - Max: 2.3W
  • Frequency - Transition: 130MHz, 110MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock15,285

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PBSS4112PAN,115
PBSS4112PAN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 120V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock285

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PBSS4112PANP,115
PBSS4112PANP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 120V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,976

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PBSS4130PAN,115
PBSS4130PAN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 30V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 165MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock3,832

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PBSS4130PANP,115
PBSS4130PANP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 30V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 165MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,164

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PBSS4140DPN,115
PBSS4140DPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
  • Power - Max: 600mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock99,917

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PBSS4140DPNF
PBSS4140DPNF

Nexperia

Transistors - Bipolar (BJT) - Arrays

PBSS4140DPN/SC-74/REEL 13"" Q1/

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SOT-457
In Stock13,053

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PBSS4160DPN,115
PBSS4160DPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 870mA, 770mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A / 330mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V / 150 @ 500mA, 5V
  • Power - Max: 420mW
  • Frequency - Transition: 220MHz, 185MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock11,072

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PBSS4160DS,115
PBSS4160DS,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 1A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 420mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock59,435

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PBSS4160DSH
PBSS4160DSH

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 0.87A SC-74

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 870mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
  • Power - Max: 290mW
  • Frequency - Transition: 220MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock9,453

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PBSS4160DSZ
PBSS4160DSZ

Nexperia

Transistors - Bipolar (BJT) - Arrays

PBSS4160DS/SOT457/SC-74

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
  • Power - Max: 700mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock484

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PBSS4160PAN,115
PBSS4160PAN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,149

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PBSS4160PANP,115
PBSS4160PANP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock357

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PBSS4160PANPSX
PBSS4160PANPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA / 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 175MHz, 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock494

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PBSS4160PANSX
PBSS4160PANSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 120mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 175MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock103

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PBSS4220PANSX
PBSS4220PANSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 20V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock159

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PBSS4230PAN,115
PBSS4230PAN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 30V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock440

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PBSS4230PANP,115
PBSS4230PANP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 30V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 290mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock472

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