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Transistors

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PBSS4240DPN,115
PBSS4240DPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 1.35A, 1.1A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A / 530mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
  • Power - Max: 1.1W
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock20,569

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PBSS4260PAN,115
PBSS4260PAN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 90mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock285

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PBSS4260PANP,115
PBSS4260PANP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 90mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,674

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PBSS4260PANPSX
PBSS4260PANPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock348

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PBSS4260PANSX
PBSS4260PANSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 140MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock181

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PBSS4350SPN,115
PBSS4350SPN,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 50V 2.7A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 2.7A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
  • Power - Max: 750mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock134

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PBSS4350SS,115
PBSS4350SS,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 2.7A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2.7A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 2W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock1,582

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PBSS4350SSJ
PBSS4350SSJ

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 50V 2.7A 8SOIC

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 2.7A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 270mA, 2.7A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
  • Power - Max: 750mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock185

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PBSS5112PAP,115
PBSS5112PAP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 120V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 480mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock433

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PBSS5130PAP,115
PBSS5130PAP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 30V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock239

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PBSS5160DS,115
PBSS5160DS,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 0.77A 6TSOP

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 770mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 5V
  • Power - Max: 420mW
  • Frequency - Transition: 185MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
In Stock9,649

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PBSS5160PAP,115
PBSS5160PAP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 1A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock4,851

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PBSS5160PAPSX
PBSS5160PAPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

IC TRANS PNP/PNP 60V SOT1118

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
In Stock225

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PBSS5220PAPSX
PBSS5220PAPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 20V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 95MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock500

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PBSS5230PAP,115
PBSS5230PAP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 30V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 420mv @ 100mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 95MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock297

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PBSS5255PAPSX
PBSS5255PAPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 55V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock167

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PBSS5260PAP,115
PBSS5260PAP,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
  • Power - Max: 510mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-HUSON-EP (2x2)
In Stock471

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PBSS5260PAPSX
PBSS5260PAPSX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 60V 2A 6HUSON

  • Manufacturer: Nexperia USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1A, 2V
  • Power - Max: 370mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: DFN2020D-6
In Stock139

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PBSS5350SS,115
PBSS5350SS,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 50V 2.7A 8SO

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 2.7A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 370mV @ 270mA, 2.7A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
  • Power - Max: 750mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock322

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PEMT1,115
PEMT1,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 40V 0.1A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock5,227

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PEMT1,315
PEMT1,315

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 40V 0.1A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock300

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PEMX1,115
PEMX1,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 40V 0.1A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock11,926

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PEMX1,315
PEMX1,315

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 40V 0.1A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock387

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PEMZ1,115
PEMZ1,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 40V 0.1A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock141

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PEMZ7,115
PEMZ7,115

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 12V 0.5A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Series: *
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock5,622

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PEMZ7,315
PEMZ7,315

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 12V 0.5A SOT666

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
  • Power - Max: 300mW
  • Frequency - Transition: 420MHz, 280MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-666
In Stock415

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PHPT610030NKX
PHPT610030NKX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN 100V 3A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
In Stock2,271

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PHPT610030NPKX
PHPT610030NPKX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS NPN/PNP 100V 3A 8LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: NPN, PNP
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A / 110mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 140MHz, 125MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
In Stock6,126

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PHPT610030PKX
PHPT610030PKX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2PNP 100V 3A 8LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 PNP (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 360mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 125MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
In Stock2,720

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PHPT610035NKX
PHPT610035NKX

Nexperia

Transistors - Bipolar (BJT) - Arrays

TRANS 2NPN 100V 3A LFPAK

  • Manufacturer: Nexperia USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 330mV @ 300mA, 3A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 10V
  • Power - Max: 1.25W
  • Frequency - Transition: 140MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
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