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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 108/110
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Transistor Type | Current - Collector (Ic) (Max) | Voltage - Collector Emitter Breakdown (Max) | Resistor - Base (R1) | Resistor - Emitter Base (R2) | DC Current Gain (hFE) (Min) @ Ic, Vce | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) | Frequency - Transition | Power - Max | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock304 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock399 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock465 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 15V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock111 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock426 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock403 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock436 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock117 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): - |
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock420 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 500MW TO92-3 |
In Stock191 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 47 kOhms |
Resistor - Emitter Base (R2): 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock288 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock260 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock345 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock342 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 500mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock211 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 |
In Stock232 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 700mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock412 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 |
In Stock420 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 700mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock239 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 |
In Stock155 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 280 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 700mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 |
In Stock438 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 600mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 |
In Stock332 More on Order |
|
Series: - |
Transistor Type: NPN - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 40V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max): 500nA |
Frequency - Transition: - |
Power - Max: 700mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock452 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock106 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock335 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock463 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 800mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 2.2 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: - |
Vce Saturation (Max) @ Ib, Ic: - |
Current - Collector Cutoff (Max): - |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 |
In Stock452 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
|
|
|
NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock236 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |
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NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 |
In Stock432 More on Order |
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Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 250mW |
Mounting Type: Surface Mount |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: SMT3; MPAK |
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NXP |
Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 |
In Stock220 More on Order |
|
Series: - |
Transistor Type: PNP - Pre-Biased |
Current - Collector (Ic) (Max): 100mA |
Voltage - Collector Emitter Breakdown (Max): 50V |
Resistor - Base (R1): 1 kOhms |
Resistor - Emitter Base (R2): 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): 1µA |
Frequency - Transition: - |
Power - Max: 500mW |
Mounting Type: Through Hole |
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: TO-92-3 |