Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN1105,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 50V 0.1W SSM	In Stock389 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
DTA125TKAT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SMT3	In Stock197 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 200 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 50µA, 500µA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
RN1309(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM	In Stock267 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
DDTA144WCA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3	In Stock140 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
RN1302,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W USM	In Stock248 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
DDTC113ZUA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock308 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
DDTA124TCA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3	In Stock383 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTC123YUA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT323	In Stock422 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SOT-323
RN2305(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.1W USM	In Stock390 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: USM
RN1116(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM	In Stock107 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
RN2412TE85LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.2W SMINI	In Stock113 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 100nA (ICBO)	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: S-Mini
DTA114YETL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3	In Stock396 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
DTA143EMT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW VMT3	In Stock168 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VMT3
DDTC143XE-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523	In Stock360 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-523	Supplier Device Package: SOT-523
DDTC123EE-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523	In Stock373 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-523	Supplier Device Package: SOT-523
DDTC114TE-7-F	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523	In Stock319 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA	Current - Collector Cutoff (Max): 500nA (ICBO)	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-523	Supplier Device Package: SOT-523
DDTC143EE-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 150MW SOT523	In Stock353 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-523	Supplier Device Package: SOT-523
DTA115EETL	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW EMT3	In Stock152 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 20mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 100 kOhms	Resistor - Emitter Base (R2): 100 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: EMT3
DTB123EKT146	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SMT3	In Stock341 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 200MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SMT3
SMUN2211T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 230MW SC59	In Stock490 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 230mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SC-59
DRA2114Y0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW MINI3	In Stock139 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRA5124E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 150MW SMINI3	In Stock136 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SC-85	Supplier Device Package: SMini3-F2-B
RN1104T5LFT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.1W SSM	In Stock395 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 100mW	Mounting Type: Surface Mount	Package / Case: SC-75, SOT-416	Supplier Device Package: SSM
DDTA114WCA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 200MW SOT23-3	In Stock336 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 4.7 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTC144ECA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock371 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DDTC124XCA-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23-3	In Stock153 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3
DRC2514E0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW MINI3	In Stock151 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 500mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA	Current - Collector Cutoff (Max): 1µA	Frequency - Transition: -	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: Mini3-G3-B
DRC9143X0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 125MW SSMINI3	In Stock265 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SC-89, SOT-490	Supplier Device Package: SSMini3-F3-B
DDTC123JLP-7	Diodes Incorporated	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW 3DFN	In Stock244 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 50mA, 5V	Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 250mW	Mounting Type: Surface Mount	Package / Case: 3-XFDFN	Supplier Device Package: 3-DFN1006 (1.0x0.6)
DRA9123J0L	Panasonic Electronic Components	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 125MW SSMINI3	In Stock204 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 125mW	Mounting Type: Surface Mount	Package / Case: SC-89, SOT-490	Supplier Device Package: SSMini3-F3-B

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