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Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased
Records 3,282
Page 51/110
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Resistor - Base (R1)
Resistor - Emitter Base (R2)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
Frequency - Transition
Power - Max
Mounting Type
Package / Case
Supplier Device Package
DTC614TUT106
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW UMT3
In Stock498

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 20V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 150MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
DRC2523Y0L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW MINI3
In Stock471

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
DTB123TKT146
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SMT3
In Stock290

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
DTD113EKT146
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW SMT3
In Stock262

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
DRA2523E0L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW MINI3
In Stock164

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
DRA2514E0L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW MINI3
In Stock163

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
DTDG23YPT100
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 1.5W MPT3
In Stock447

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 1.5W
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MPT3
PDTA124EU,135
Nexperia

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SOT323
In Stock426

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
RN2301,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 0.1W USM
In Stock414

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
DTA124XKAT146
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SMT3
In Stock397

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3
DTC114EEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 150MW EMT3F
In Stock302

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
DDTC144ECA-7-F
Diodes Incorporated

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW SOT23-3
In Stock398

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
DDTC113ZUA-7-F
Diodes Incorporated

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW SOT323
In Stock444

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
DTC115TMT2L
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 150MW VMT3
In Stock150

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3
DTC143TM3T5G
ON Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 260MW SOT723
In Stock499

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 260mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: SOT-723
RN1305,LF
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 0.1W USM
In Stock333

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: USM
DDTB113EU-7-F
Diodes Incorporated

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 200MW SOT323
In Stock113

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
DTA023EEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 50V 0.15W SC89
In Stock454

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
DTA044EEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 50V 0.15W SC89
In Stock465

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)
DTA114EEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 150MW EMT3
In Stock195

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
DTC014TUBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 50V UMT3F
In Stock452

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
DTA143ZETL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS PNP 150MW EMT3
In Stock305

More on Order
Series: -
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: EMT3
DRC2543E0L
Panasonic Electronic Components

Transistors - Bipolar (BJT) - Single, Pre-Biased

TRANS PREBIAS NPN 200MW MINI3
In Stock486

More on Order
Series: -
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
DTA024XEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

PNP DIGITAL TRANSISTOR (WITH BUI
In Stock500

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DTA043XEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

PNP DIGITAL TRANSISTOR (WITH BUI
In Stock132

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DTC043XUBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

NPN DIGITAL TRANSISTOR (WITH BUI
In Stock317

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DTC043XEBTL
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

NPN DIGITAL TRANSISTOR (WITH BUI
In Stock145

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DTC043XMT2L
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

NPN DIGITAL TRANSISTOR (WITH BUI
In Stock268

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
DTA013ZMT2L
Rohm Semiconductor

Transistors - Bipolar (BJT) - Single, Pre-Biased

PNP DIGITAL TRANSISTOR (WITH BUI
In Stock263

More on Order
Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
RN1104MFV,L3F(CT
Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - Single, Pre-Biased

NPN BRT Q1BSR47KOHM Q1BER47KOHM
In Stock147

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Series: *
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1): -
Resistor - Emitter Base (R2): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -