Bipolar (BJT) - Single, Pre-Biased

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CategorySemiconductors / Transistors / Bipolar (BJT) - Single, Pre-Biased

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Part Number	Manufacturer	Description	In Stock	Series	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN1108MFV,L3F	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN	In Stock388 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 150mW	Mounting Type: Surface Mount	Package / Case: SOT-723	Supplier Device Package: VESM
DTD123YCHZGT116	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased DTD123YCHZG IS THE HIGH RELIABIL	In Stock441 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
DTA114EMFHAT2L	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased DIGITAL TRANSISTOR PNP 50V 100MA	In Stock267 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN1303,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR NPN BRT Q1BSR22KOHM Q	In Stock154 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN1415,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased NPN BRT Q1BSR2.2KOHM Q1BER10KOHM	In Stock231 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN1417,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased NPN BRT Q1BSR10KOHM Q1BER4.7KOHM	In Stock107 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN1418,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased NPN BRT Q1BSR47KOHM Q1BER10KOHM	In Stock326 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2303,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR22KOHM Q	In Stock472 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2406,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR4.7KOHM	In Stock422 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2411,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR10KOHM Q1BERINFINIT	In Stock402 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2416,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR4.7KOHM Q1BER10KOHM	In Stock327 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2418,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BER10KOHM	In Stock296 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
DTA123EU3T106	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased DTA123EU3 IS AN DIGITAL TRANSIST	In Stock362 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 2.2 kOhms	Resistor - Emitter Base (R2): 2.2 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): -	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: UMT3
RN1116,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR NPN BRT Q1BSR4.7KOHM	In Stock351 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2103,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR22KOHM Q1BER22KOHM	In Stock267 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2104,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BER47KOHM	In Stock111 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2105,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR2.2KOHM Q1BER47KOHM	In Stock346 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2106,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR4.7KOHM Q1BER47KOHM	In Stock495 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2108,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR22KOHM Q1BER47KOHM	In Stock128 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2109,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BER22KOHM	In Stock180 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2113,LF(CT	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased PNP BRT Q1BSR47KOHM Q1BERINFINIT	In Stock363 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
DTB113ECHZGT116	Rohm Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased DTB113ECHZG IS THE HIGH RELIABIL	In Stock437 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
DTC114ECA-TP	Micro Commercial Co	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 200MW SOT23	In Stock332 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 10 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V	Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: 250MHz	Power - Max: 200mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23
RN2425(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR0.47KOHM	In Stock456 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
RN2426(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANSISTOR PNP BRT Q1BSR1KOHM Q1	In Stock467 More on Order	Series: *	Transistor Type: -	Current - Collector (Ic) (Max): -	Voltage - Collector Emitter Breakdown (Max): -	Resistor - Base (R1): -	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: -	Vce Saturation (Max) @ Ib, Ic: -	Current - Collector Cutoff (Max): -	Frequency - Transition: -	Power - Max: -	Mounting Type: -	Package / Case: -	Supplier Device Package: -
SMMUN2116LT1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 0.246W SOT-23	In Stock235 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 4.7 kOhms	Resistor - Emitter Base (R2): -	DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 246mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MMUN2114LT3G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 246MW SOT23-3	In Stock403 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 10 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 246mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SOT-23-3 (TO-236)
MUN5130T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 202MW SC70-3	In Stock255 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 1 kOhms	Resistor - Emitter Base (R2): 1 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 202mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70-3 (SOT323)
MUN5134T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 202MW SC70-3	In Stock330 More on Order	Series: -	Transistor Type: PNP - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 22 kOhms	Resistor - Emitter Base (R2): 47 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 202mW	Mounting Type: Surface Mount	Package / Case: SC-70, SOT-323	Supplier Device Package: SC-70-3 (SOT323)
MUN2237T1G	ON Semiconductor	Transistors - Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 338MW SC59	In Stock110 More on Order	Series: -	Transistor Type: NPN - Pre-Biased	Current - Collector (Ic) (Max): 100mA	Voltage - Collector Emitter Breakdown (Max): 50V	Resistor - Base (R1): 47 kOhms	Resistor - Emitter Base (R2): 22 kOhms	DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V	Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA	Current - Collector Cutoff (Max): 500nA	Frequency - Transition: -	Power - Max: 338mW	Mounting Type: Surface Mount	Package / Case: TO-236-3, SC-59, SOT-23-3	Supplier Device Package: SC-59

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