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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 38/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays 25V POWERBLOCK N CH MOSFET |
In Stock223 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 40A (Ta) |
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 1.85V @ 250µA, 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 19.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1.04nF @ 12.5V, 2.51nF @ 12.5V |
Power - Max: 12W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-VSON-CLIP (5x6) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8LSON |
In Stock480 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (5x6) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 40A 8LSON |
In Stock454 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 40A |
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 8V |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 15V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (5x6) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 1212-8 |
In Stock385 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id: 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
|
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 50A 8SON |
In Stock342 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 12.5 |
Power - Max: 13W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (5x6) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V POWERPAK8X8 |
In Stock421 More on Order |
|
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 100A (Tc) |
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V |
Power - Max: 75W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 8 x 8 Dual |
Supplier Device Package: PowerPAK® 8 x 8 Dual |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 23A |
In Stock352 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 23A |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V |
Power - Max: 2.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerWDFN |
Supplier Device Package: 12-Power3.3x5 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 3.1A 12-MLP |
In Stock124 More on Order |
|
Series: GreenBridge™ PowerTrench® |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 3.1A |
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V |
Power - Max: 1.9W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-WDFN Exposed Pad |
Supplier Device Package: 12-MLP (5x4.5) |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N&P-CH COMMON DRAIN |
In Stock103 More on Order |
|
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N and P-Channel, Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V, 200V |
Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc) |
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC, 14nC, 30.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1474pF, 1450pF, 1302pF @ 20V, 100V |
Power - Max: 48W (Tc), 60W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount, Wettable Flank |
Package / Case: Die |
Supplier Device Package: Die |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 24A POWER3.3X5 |
In Stock284 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 24A |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V |
Power - Max: 50W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerWDFN |
Supplier Device Package: 12-Power3.3x5 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 11A 6-MLP |
In Stock147 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3050pF @ 40V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerWDFN |
Supplier Device Package: 12-Power3.3x5 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 10A PWR56 |
In Stock384 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V |
Power - Max: 2.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-MLP (5x6), Power56 |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V |
In Stock337 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10.4A |
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 10.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 50V |
Power - Max: 2.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-Power 5x6 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
In Stock452 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 2.6A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6TSOP |
In Stock309 More on Order |
|
Series: Automotive, AEC-Q101, TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) |
Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.67W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 40V 22-VSON-CLIP |
In Stock190 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 22-PowerTFDFN |
Supplier Device Package: 22-VSON-CLIP (5x6) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP |
In Stock172 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 22-PowerTFDFN |
Supplier Device Package: 22-VSON-CLIP (5x6) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 60V 22-VSON-CLIP |
In Stock405 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 4840pF @ 30V |
Power - Max: 12W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 22-PowerTFDFN |
Supplier Device Package: 22-VSON-CLIP (5x6) |
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EPC |
Transistors - FETs, MOSFETs - Arrays GANFET 2NCH 100V 23A DIE |
In Stock1,382 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 23A |
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 50V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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Microchip Technology |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 500V 8SOIC |
In Stock478 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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EPC |
Transistors - FETs, MOSFETs - Arrays GANFET 2NCH 80V 9.5A DIE |
In Stock282 More on Order |
|
Series: eGaN® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 9.5A |
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 40V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: Die |
Supplier Device Package: Die |
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Transphorm |
Transistors - FETs, MOSFETs - Arrays GANFET 2N-CH 600V 70A MODULE |
In Stock480 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 8V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 100V |
Power - Max: 470W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: Module |
Supplier Device Package: Module |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP4 |
In Stock379 More on Order |
|
Series: POWER MOS 7® |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 18A |
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
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Skyworks Solutions |
Transistors - FETs, MOSFETs - Arrays MOSFET 8SOP |
In Stock21,741 More on Order |
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Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: - |
Supplier Device Package: 8-SOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.7A MICRO8 |
In Stock128 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.7A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 15V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC |
In Stock165 More on Order |
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Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 1.7A MICRO8 |
In Stock423 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.7A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Supplier Device Package: Micro8™ |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.3A 8-SOIC |
In Stock122 More on Order |
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Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC |
In Stock491 More on Order |
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Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.5A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC |
In Stock343 More on Order |
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Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A, 3A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |