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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 39/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 2.3A 8-SOIC |
In Stock311 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 3.6A 8-SOIC |
In Stock226 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock396 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 16A |
Rds On (Max) @ Id, Vgs: 61mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 3.5V @ 9µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V |
Power - Max: 29W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-4 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A 8-SOIC |
In Stock415 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
In Stock395 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.6A, 11A |
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 7.6A, 10V |
Vgs(th) (Max) @ Id: 2.25V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V |
Power - Max: 1.4W, 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.7A 8SOIC |
In Stock145 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: P-DSO-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7.8A/8.9A 8SOIC |
In Stock428 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7.8A, 8.9A |
Rds On (Max) @ Id, Vgs: 21.8mOhm @ 7.8A, 10V |
Vgs(th) (Max) @ Id: 2.25V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock359 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.1A/11A 8-SOIC |
In Stock368 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.1A, 11A |
Rds On (Max) @ Id, Vgs: 16.4mOhm @ 9.1A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 10A/12A 8-SOIC |
In Stock243 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 10A, 12A |
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8-SOIC |
In Stock499 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 55V 3.4A 8-SOIC |
In Stock347 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 30V 20A WISON-8 |
In Stock229 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 20A (Tc) |
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 15V |
Power - Max: 17W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-WISON-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock456 More on Order |
|
Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 15µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V |
Power - Max: 41W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount, Wettable Flank |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-10 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays DIFFERENTIATED MOSFETS |
In Stock126 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc) |
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V |
Power - Max: 1.9W (Ta), 31W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-WISON-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 11.5A 8TDSON |
In Stock258 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11.5A |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V |
Power - Max: 57W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-4 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8A 8-SOIC |
In Stock250 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N-CH 30V 8TISON |
In Stock397 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta) |
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: PG-TISON-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 7A 8DSO |
In Stock436 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V |
Vgs(th) (Max) @ Id: 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: PG-DSO-8 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8SOIC |
In Stock460 More on Order |
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Series: Automotive, AEC-Q101, HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 20A TDSON-8 |
In Stock292 More on Order |
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Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V |
Power - Max: 65W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-4 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock277 More on Order |
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Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 4V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V |
Power - Max: 65W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount, Wettable Flank |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-10 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8TDSON |
In Stock449 More on Order |
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Series: Automotive, AEC-Q101, OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 30µA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V |
Power - Max: 65W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerVDFN |
Supplier Device Package: PG-TDSON-8-4 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8SOIC |
In Stock331 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.9A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 55V 3.4A 8SOIC |
In Stock285 More on Order |
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Series: Automotive, AEC-Q101, HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 5.1A 8SOIC |
In Stock380 More on Order |
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Series: Automotive, AEC-Q101, HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 5.1A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 1200V 100A MODULE |
In Stock462 More on Order |
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Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 100A |
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 15V |
Vgs(th) (Max) @ Id: 5.55V @ 40mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 7950pF @ 800V |
Power - Max: - |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays SIC POWER MODULE-1200V-80A |
In Stock271 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4V @ 13.2mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V |
Power - Max: 600W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 300A |
In Stock412 More on Order |
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Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4V @ 68mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 35000pF @ 10V |
Power - Max: 1875W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 11A TO-220FP-5 |
In Stock708 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 11A |
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V |
Power - Max: 18W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: TO-220-5 Full Pack |
Supplier Device Package: TO-220-5 Full-Pak |