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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 40/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 10.6V 14SOIC |
In Stock631 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 14-SOIC |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 60V 8SOIC |
In Stock1,425 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 3.6A, 2.6A |
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8SOIC |
In Stock330 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock560 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock545 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V |
Vgs(th) (Max) @ Id: 360mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock524 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V |
Vgs(th) (Max) @ Id: 1.26V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock342 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 20mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock344 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V |
Vgs(th) (Max) @ Id: 1.42V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock302 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 25Ohm |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock353 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 10mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8SOIC |
In Stock231 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N/2P-CH 10.6V 14SOIC |
In Stock515 More on Order |
|
Series: - |
FET Type: 2 N and 2 P-Channel Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 40mA, 16mA |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 14-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 14-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock494 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 25Ohm |
Vgs(th) (Max) @ Id: 10mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock478 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 10mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock470 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 10mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
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|
Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 5A 15-SIP |
In Stock271 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2 N-CH 1200V 50A MODULE |
In Stock242 More on Order |
|
Series: CoolSiC™+ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id: 5.55V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V |
Power - Max: 20mW |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: Module |
Supplier Device Package: Module |
|
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 1200V 180A MODULE |
In Stock468 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: 204A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V |
Power - Max: 1130W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: - |
Package / Case: Module |
Supplier Device Package: Module |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 10PICOSTAR |
In Stock1,098 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 10-XFLGA |
Supplier Device Package: 10-Picostar (3.37x1.47) |
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Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 30A 5PTAB |
In Stock631 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 25A, 8V |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V |
Power - Max: 8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 5-LGA |
Supplier Device Package: 5-PTAB (5x3.5) |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 35V 8A 15-SIP |
In Stock386 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 500V 2.5A 12-SIP |
In Stock558 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 2.5A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 250V 7A 12-SIP |
In Stock390 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 250mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V |
Power - Max: 4W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 26A SP3 |
In Stock289 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 26A |
Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V |
Power - Max: 208W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 95A SP3 |
In Stock236 More on Order |
|
Series: CoolMOS™ |
FET Type: 2 N Channel (Dual Buck Chopper) |
FET Feature: Super Junction |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 95A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V |
Vgs(th) (Max) @ Id: 3.9V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V |
Power - Max: 462W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 51A SP3 |
In Stock273 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 500V 46A SP4 |
In Stock498 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 1000V 18A SP4 |
In Stock242 More on Order |
|
Series: - |
FET Type: 4 N-Channel (H-Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: 18A |
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
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Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4 |
In Stock386 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6.8A/4.9A 8SO |
In Stock1,386 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.8A, 4.9A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V |
Power - Max: 1.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |