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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 69/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock378 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V |
Vgs(th) (Max) @ Id: 3.45V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock404 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V |
Vgs(th) (Max) @ Id: 220mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock310 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V |
Vgs(th) (Max) @ Id: 420mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock494 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.9V |
Vgs(th) (Max) @ Id: 3.35V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock413 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V |
Vgs(th) (Max) @ Id: 360mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock473 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock362 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock148 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock164 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V |
Vgs(th) (Max) @ Id: 1.26V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16SOIC |
In Stock127 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 380mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP |
In Stock211 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP |
In Stock398 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC |
In Stock465 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC |
In Stock192 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 14Ohm |
Vgs(th) (Max) @ Id: 10mV @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock192 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V |
Vgs(th) (Max) @ Id: 360mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP |
In Stock473 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock169 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V |
Vgs(th) (Max) @ Id: 1.26V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock105 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock482 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock426 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V |
Vgs(th) (Max) @ Id: 1.42V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock116 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 540Ohm @ 0V |
Vgs(th) (Max) @ Id: 3.45V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP |
In Stock202 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP |
In Stock282 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP |
In Stock339 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 100V 10A 12SIP |
In Stock356 More on Order |
|
Series: - |
FET Type: 4 N-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
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|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock278 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V |
Vgs(th) (Max) @ Id: 220mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock282 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.2V |
Vgs(th) (Max) @ Id: 220mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock349 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V |
Vgs(th) (Max) @ Id: 420mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock336 More on Order |
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Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V |
Vgs(th) (Max) @ Id: 420mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock324 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V |
Vgs(th) (Max) @ Id: 1.42V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |