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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 68/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A 10-MFP |
In Stock435 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.4A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1V @ 1.1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 10-UFBGA, CSPBGA |
Supplier Device Package: 10-Micro Foot™ CSP (2x5) |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V |
In Stock137 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) Common Source |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A |
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V |
Power - Max: 2.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-Power 5x6 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays PTNG 80/20V IN 5X6CLIP |
In Stock125 More on Order |
|
Series: PowerTrench® |
FET Type: N-Channel |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 136A (Tc) |
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-PQFN (5x6) |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 6-MLP |
In Stock405 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 15A |
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerWDFN |
Supplier Device Package: 12-Power3.3x5 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 80V 16A POWER 5X6 |
In Stock100 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 82A (Tc) |
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5875pF @ 40V |
Power - Max: 2.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Power56 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock430 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A, 15.2A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V |
Power - Max: 1.98W, 4.16W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 13A/27A 8PQFN |
In Stock447 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 13A, 27A |
Rds On (Max) @ Id, Vgs: 6mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 13V |
Power - Max: 800mW, 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Powerclip-33 |
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|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 45A 8LSON |
In Stock376 More on Order |
|
Series: NexFET™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Logic Level Gate, 5V Drive |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 45A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 1.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 13.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 15V |
Power - Max: 2.8W |
Operating Temperature: -55°C ~ 155°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerLDFN |
Supplier Device Package: 8-LSON (5x6) |
|
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 15A |
In Stock384 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 15A |
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5245pF @ 30V |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 12-PowerWDFN |
Supplier Device Package: 12-Power3.3x5 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 46V 22A POWER |
In Stock371 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 22A, 93A |
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11130pF @ 30V |
Power - Max: 2.2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-Power 5x6 |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7.1A PPAK SO-8 |
In Stock138 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 7.1A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.1A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 303A PQFN |
In Stock389 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 303A (Tc) |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 32-PowerWFQFN |
Supplier Device Package: 32-PQFN (6x6) |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays T6 60V LL S08FL DS |
In Stock413 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) |
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 98µA |
Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V |
Power - Max: 3.5W (Ta), 125W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerTDFN |
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays T6 40V LL S08FL DS |
In Stock194 More on Order |
|
Series: - |
FET Type: - |
FET Feature: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: - |
Package / Case: - |
Supplier Device Package: - |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays FET ENGR DEV-NOT REL |
In Stock440 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 87A (Tc) |
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 20V |
Power - Max: 2.1W (Ta), 33W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: Power 3.3x5 |
|
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 33A POWER |
In Stock222 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 33A, 156A |
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7940pF @ 20V |
Power - Max: 2.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-Power 5x6 |
|
|
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 60V 4A 12-SIP |
In Stock106 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 550Ohm @ 2A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V |
Power - Max: 4W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 60V 4A 12-SIP |
In Stock384 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 4V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 12-SIP |
Supplier Device Package: 12-SIP w/fin |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 10.6V 8SOIC |
In Stock366 More on Order |
|
Series: - |
FET Type: N and P-Channel Complementary |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 1800Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 3N/3P-CH 55V 8A 15-SIP |
In Stock339 More on Order |
|
Series: - |
FET Type: 3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Through Hole |
Package / Case: 15-SIP Exposed Tab, Formed Leads |
Supplier Device Package: 15-ZIP |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock220 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock131 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5.4V |
Vgs(th) (Max) @ Id: 1.42V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC |
In Stock455 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.4V |
Vgs(th) (Max) @ Id: 420mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 38A POWER5X6 |
In Stock152 More on Order |
|
Series: PowerTrench® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 167A (Tc) |
Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 142nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 15V |
Power - Max: 2.3W (Ta), 43W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-PowerWDFN |
Supplier Device Package: 8-Power 5x6 |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock414 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4V |
Vgs(th) (Max) @ Id: 20mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC |
In Stock352 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: 14Ohm |
Vgs(th) (Max) @ Id: 20mV @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC |
In Stock418 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC |
In Stock193 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC |
In Stock189 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
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Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock163 More on Order |
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Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 820mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |