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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 71/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock387 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 10.6V 8DIP |
In Stock498 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 270Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.2V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP |
In Stock320 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 80mA |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 20mV @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock281 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 380mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock337 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 780mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16DIP |
In Stock136 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Depletion Mode |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V |
Vgs(th) (Max) @ Id: 380mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
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|
Sanken |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 60V 7A 15-SIP |
In Stock356 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V |
Power - Max: 5W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 15-SIP |
Supplier Device Package: 15-SIP |
|
|
|
Microchip Technology |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N/6P-CH 200V 56VQFN |
In Stock169 More on Order |
|
Series: - |
FET Type: 6 N and 6 P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 8Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 56-VFQFN Exposed Pad |
Supplier Device Package: 56-QFN (8x8) |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10V 8DIP |
In Stock139 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.01V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 600mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10V 8SOIC |
In Stock221 More on Order |
|
Series: EPAD® |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 500Ohm @ 5V |
Vgs(th) (Max) @ Id: 1.01V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 600mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 16SOIC |
In Stock285 More on Order |
|
Series: EPAD® |
FET Type: 4 N-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: 12mA, 3mA |
Rds On (Max) @ Id, Vgs: 500Ohm @ 4.8V |
Vgs(th) (Max) @ Id: 810mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 16-SOIC |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock249 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 180mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock109 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 380mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 4 P-CH 8V 16DIP |
In Stock140 More on Order |
|
Series: EPAD®, Zero Threshold™ |
FET Type: 4 P-Channel, Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 8V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 780mV @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C |
Mounting Type: Through Hole |
Package / Case: 16-DIP (0.300", 7.62mm) |
Supplier Device Package: 16-PDIP |
|
|
|
Advanced Linear Devices Inc. |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP |
In Stock155 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Matched Pair |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 10.6V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 75Ohm @ 5V |
Vgs(th) (Max) @ Id: 1V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V |
Power - Max: 500mW |
Operating Temperature: 0°C ~ 70°C (TJ) |
Mounting Type: Through Hole |
Package / Case: 8-DIP (0.300", 7.62mm) |
Supplier Device Package: 8-PDIP |
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|
IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 100A I5-PAK |
In Stock434 More on Order |
|
Series: Trench™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 100A |
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V |
Power - Max: 150W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Package / Case: ISOPLUSi5-Pak™ |
Supplier Device Package: ISOPLUSi5-Pak™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 100V 62A/54A I4PAC |
In Stock280 More on Order |
|
Series: Trench™ |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 62A, 54A |
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 25V |
Power - Max: 89W, 132W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH |
In Stock227 More on Order |
|
Series: - |
FET Type: N and P-Channel, Common Drain |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 54A (Tc), 62A (Tc) |
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA, 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V, 104nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V, 5080pF @ 25V |
Power - Max: 89W, 132W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: ISOPLUSi5-Pak™ |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 250V 30A I4-PAC |
In Stock467 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 250V |
Current - Continuous Drain (Id) @ 25°C: 30A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V |
Power - Max: 125W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 200V 33A I4-PAC |
In Stock402 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 33A |
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V |
Power - Max: 125W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 150V 36A/22A I4PAC |
In Stock384 More on Order |
|
Series: Polar™ |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 36A, 22A |
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V |
Power - Max: 125W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 150V 53A I4-PAC |
In Stock246 More on Order |
|
Series: GigaMOS™, HiPerFET™, TrenchT2™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 53A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V |
Power - Max: 180W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 75A I4-PAC-5 |
In Stock372 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 75A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 75V 120A I4-PAC-5 |
In Stock128 More on Order |
|
Series: HiPerFET™, TrenchT2™ |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 120A |
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V |
Power - Max: 170W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Package / Case: ISOPLUSi5-Pak™ |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 13A I4-PAC |
In Stock400 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 13A |
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 25V |
Power - Max: 132W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 12A I4-PAC |
In Stock377 More on Order |
|
Series: HiPerFET™, PolarHT™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 12A |
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V |
Power - Max: 130W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 75A I4-PAC-5 |
In Stock187 More on Order |
|
Series: HiPerFET™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 75A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: i4-Pac™-5 |
Supplier Device Package: ISOPLUS i4-PAC™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 100V 90A 24-SMD |
In Stock499 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 24-SMD, Gull Wing |
Supplier Device Package: 24-SMD |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 150V 50A 24-SMD |
In Stock178 More on Order |
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Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5800pF @ 25V |
Power - Max: - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: ISOPLUS-DIL™ |
Supplier Device Package: ISOPLUS-DIL™ |
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IXYS |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 85V 103A ISOPLUS |
In Stock316 More on Order |
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Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 85V |
Current - Continuous Drain (Id) @ 25°C: 103A |
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 17-SMD, Gull Wing |
Supplier Device Package: ISOPLUS-DIL™ |