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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 80/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC |
In Stock206 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.5A |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4A 8-SOIC |
In Stock371 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 15V |
Power - Max: 1.75W |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.7A 8-TSSOP |
In Stock172 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 7.8A 8-SOIC |
In Stock355 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 7.8A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.1A S-MINI-6P |
In Stock363 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SMINI6-G1 |
|
|
|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 0.2A SC70-6 |
In Stock237 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V |
Power - Max: 200mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SOT-363 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 7.9A FLIP-FET |
In Stock380 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.9A |
Rds On (Max) @ Id, Vgs: 36mOhm @ 7.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 16-WFBGA |
Supplier Device Package: 16-FlipFet™ |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A 8-SOIC |
In Stock232 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.2A 6TSOP |
In Stock244 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A |
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V |
Power - Max: 960mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.9A 6TSOP |
In Stock327 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.9A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V |
Power - Max: 960mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/PCH 20V 2.7A/2.2A 6TSOP |
In Stock500 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.7A 6-TSOP |
In Stock212 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8-SOIC |
In Stock193 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.9A 8-TSSOP |
In Stock143 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.9A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 4.3A 8-TSSOP |
In Stock351 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 5.5A 8-TSSOP |
In Stock300 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.5A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.7A 8-TSSOP |
In Stock187 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.6A 8-TSSOP |
In Stock497 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.5A 8-TSSOP |
In Stock302 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.9A 6-TSOP |
In Stock359 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.9A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.2A 6-TSOP |
In Stock294 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A |
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6-TSOP |
In Stock268 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.7A 6-TSOP |
In Stock426 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 7.8A 8-SOIC |
In Stock171 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 7.8A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 8A 8-SOIC |
In Stock176 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 9.2A 8-SOIC |
In Stock374 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 9.2A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A 8-SOIC |
In Stock498 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.5A 8-TSSOP |
In Stock317 More on Order |
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Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.6A 8-TSSOP |
In Stock308 More on Order |
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Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 5.5A 8-TSSOP |
In Stock494 More on Order |
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Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.5A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |