Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 50A SP1 |
In Stock387 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 50A |
Rds On (Max) @ Id, Vgs: 84mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP6 |
In Stock118 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 99A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 51A SP4 |
In Stock310 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 46A SP4 |
In Stock499 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) Asymmetrical |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 46A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V |
Power - Max: 357W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 37A SP3 |
In Stock410 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 37A |
Rds On (Max) @ Id, Vgs: 120mOhm @ 18.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 4367pF @ 25V |
Power - Max: 312W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 51A SP3 |
In Stock116 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP3 |
Supplier Device Package: SP3 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 180A SP6 |
In Stock478 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 180A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 163A SP6 |
In Stock448 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 163A |
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V |
Power - Max: 1136W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 149A LP8 |
In Stock474 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 149A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 74.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 29600pF @ 25V |
Power - Max: 1250W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 99A SP4 |
In Stock387 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 99A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V |
Power - Max: 781W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 500V 90A SP4 |
In Stock324 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 90A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V |
Power - Max: 694W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP4 |
Supplier Device Package: SP4 |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 6N-CH 500V 51A SP6-P |
In Stock239 More on Order |
|
Series: - |
FET Type: 6 N-Channel (3-Phase Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 51A |
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V |
Power - Max: 390W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP6 |
Supplier Device Package: SP6-P |
|
|
Microsemi |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 600V 20A SP1 |
In Stock234 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 20A |
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V |
Power - Max: 208W |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Package / Case: SP1 |
Supplier Device Package: SP1 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 35V 7A/5A 8SOIC |
In Stock490 More on Order |
|
Series: PowerTrench® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 35V |
Current - Continuous Drain (Id) @ 25°C: 7A, 5A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V 3A 8-SOIC |
In Stock374 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 25V 8-SOIC |
In Stock257 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.9A 8-SOIC |
In Stock126 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.3A 8SOIC |
In Stock445 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 3.6A 8SOIC |
In Stock240 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8SOIC |
In Stock316 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 4A/3A 8SOIC |
In Stock186 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A, 3A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.5A 8-SOIC |
In Stock277 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.5A |
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5.2A 8SOIC |
In Stock294 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.2A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 5.2A, 4.5V |
Vgs(th) (Max) @ Id: 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.9A 8SOIC |
In Stock352 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.9A |
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 5.1A 8-SOIC |
In Stock397 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 5.1A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V |
Power - Max: 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V 8-SOIC |
In Stock154 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 8-SOIC |
In Stock324 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V |
Power - Max: 2.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 3.6A 8-SOIC |
In Stock135 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 3.6A |
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.5A 8TSSOP |
In Stock235 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.6A 8TSSOP |
In Stock412 More on Order |
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Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |