FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays

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Part Number	Manufacturer	Description	In Stock	Series	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NTZD3156CT2G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-563	In Stock254 More on Order	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA	Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
NTZD3156CT5G	ON Semiconductor	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-563	In Stock184 More on Order	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA	Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 72pF @ 16V	Power - Max: 250mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: SOT-563, SOT-666	Supplier Device Package: SOT-563
SI5519DU-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6A CHIPFETs	In Stock403 More on Order	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Standard	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 36mOhm @ 6.1A, 4.5V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V	Power - Max: 10.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® ChipFET™ Dual	Supplier Device Package: PowerPAK® ChipFet Dual
SI7224DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6A PPAK 1212-8	In Stock494 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V	Power - Max: 17.8W, 23W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® 1212-8 Dual	Supplier Device Package: PowerPAK® 1212-8 Dual
SI7905DN-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 40V 6A PPAK 1212-8	In Stock208 More on Order	Series: TrenchFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 60mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 880pF @ 20V	Power - Max: 20.8W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® 1212-8 Dual	Supplier Device Package: PowerPAK® 1212-8 Dual
SI7940DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 7.6A PPAK SO-8	In Stock330 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 7.6A	Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SO-8 Dual	Supplier Device Package: PowerPAK® SO-8 Dual
SI7948DP-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 3A PPAK SO-8	In Stock406 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 3A	Rds On (Max) @ Id, Vgs: 75mOhm @ 4.6A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1.4W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SO-8 Dual	Supplier Device Package: PowerPAK® SO-8 Dual
SIA511DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 4.5A SC70-6	In Stock357 More on Order	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V	Power - Max: 6.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIA513DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4.5A SC70-6	In Stock490 More on Order	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V	Power - Max: 6.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIA911EDJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.5A SC70-6	In Stock201 More on Order	Series: TrenchFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 101mOhm @ 2.7A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 7.8W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIA912DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 12V 4.5A SC70-6	In Stock435 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V	Power - Max: 6.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIA913DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 4.5A SC70-6	In Stock347 More on Order	Series: TrenchFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 70mOhm @ 3.3A, 4.5V	Vgs(th) (Max) @ Id: 1V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V	Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V	Power - Max: 6.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIA917DJ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.5A SC70-6	In Stock364 More on Order	Series: TrenchFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 1.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 10V	Power - Max: 6.5W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-70-6 Dual	Supplier Device Package: PowerPAK® SC-70-6 Dual
SIB914DK-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 8V 1.5A PPAK SC75-6	In Stock228 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 8V	Current - Continuous Drain (Id) @ 25°C: 1.5A	Rds On (Max) @ Id, Vgs: 113mOhm @ 2.5A, 4.5V	Vgs(th) (Max) @ Id: 800mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 4V	Power - Max: 3.1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: PowerPAK® SC-75-6L Dual	Supplier Device Package: PowerPAK® SC-75-6L Dual
SI4226DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 8A 8-SOIC	In Stock168 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 8A	Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 4.5V	Vgs(th) (Max) @ Id: 2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V	Power - Max: 3.2W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
SI4561DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 6.8A 8-SOIC	In Stock233 More on Order	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A	Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V	Vgs(th) (Max) @ Id: 3V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V	Power - Max: 3W, 3.3W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
SI4952DY-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 8A 8-SOIC	In Stock379 More on Order	Series: TrenchFET®	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 25V	Current - Continuous Drain (Id) @ 25°C: 8A	Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V	Vgs(th) (Max) @ Id: 2.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V	Power - Max: 2.8W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.154", 3.90mm Width)	Supplier Device Package: 8-SO
IRF7751TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 4.5A 8TSSOP	In Stock498 More on Order	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 4.5A	Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
IRF7756TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 4.3A 8TSSOP	In Stock432 More on Order	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 12V	Current - Continuous Drain (Id) @ 25°C: 4.3A	Rds On (Max) @ Id, Vgs: 40mOhm @ 4.3A, 4.5V	Vgs(th) (Max) @ Id: 900mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
IRF7750TRPBF	Infineon Technologies	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 4.7A 8TSSOP	In Stock388 More on Order	Series: HEXFET®	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 4.7A	Rds On (Max) @ Id, Vgs: 30mOhm @ 4.7A, 4.5V	Vgs(th) (Max) @ Id: 1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
TPC8208(TE12L,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5A SOP8	In Stock385 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 5A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4V	Vgs(th) (Max) @ Id: 1.2V @ 200µA	Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
TPC8405(TE12L,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6A/4.5A 8SOP	In Stock227 More on Order	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A	Rds On (Max) @ Id, Vgs: 26mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
TPCF8304(TE85L,F,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 3.2A VS-8	In Stock318 More on Order	Series: -	FET Type: 2 P-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 3.2A	Rds On (Max) @ Id, Vgs: 72mOhm @ 1.6A, 10V	Vgs(th) (Max) @ Id: 1.2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V	Power - Max: 330mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: VS-8 (2.9x1.5)
TPCP8203(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 4.7A PS-8	In Stock436 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Standard	Drain to Source Voltage (Vdss): 40V	Current - Continuous Drain (Id) @ 25°C: 4.7A	Rds On (Max) @ Id, Vgs: -	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 360mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: PS-8 (2.9x2.4)
TPCP8401(TE85L,F)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V/12V PS-8	In Stock368 More on Order	Series: -	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V, 12V	Current - Continuous Drain (Id) @ 25°C: 100mA, 5.5A	Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V	Vgs(th) (Max) @ Id: 1.1V @ 100µA	Gate Charge (Qg) (Max) @ Vgs: -	Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V	Power - Max: 1W	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SMD, Flat Lead	Supplier Device Package: PS-8 (2.9x2.4)
TPC8211(TE12L,Q,M)	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5.5A SOP8	In Stock225 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 5.5A	Rds On (Max) @ Id, Vgs: 36mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2.5V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
TPC8212-H(TE12LQ,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6A SOP8	In Stock299 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 30V	Current - Continuous Drain (Id) @ 25°C: 6A	Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
TPC8213-H(TE12LQ,M	Toshiba Semiconductor and Storage	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 5A SOP8	In Stock182 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 60V	Current - Continuous Drain (Id) @ 25°C: 5A	Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 10V	Vgs(th) (Max) @ Id: 2.3V @ 1mA	Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V	Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 10V	Power - Max: 450mW	Operating Temperature: 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-SOIC (0.173", 4.40mm Width)	Supplier Device Package: 8-SOP (5.5x6.0)
SI6562DQ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 8-TSSOP	In Stock316 More on Order	Series: TrenchFET®	FET Type: N and P-Channel	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: -	Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V	Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)	Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 1W	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP
SI6925ADQ-T1-GE3	Vishay Siliconix	Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 3.3A 8-TSSOP	In Stock167 More on Order	Series: -	FET Type: 2 N-Channel (Dual)	FET Feature: Logic Level Gate	Drain to Source Voltage (Vdss): 20V	Current - Continuous Drain (Id) @ 25°C: 3.3A	Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V	Vgs(th) (Max) @ Id: 1.8V @ 250µA	Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds: -	Power - Max: 800mW	Operating Temperature: -55°C ~ 150°C (TJ)	Mounting Type: Surface Mount	Package / Case: 8-TSSOP (0.173", 4.40mm Width)	Supplier Device Package: 8-TSSOP

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