Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4A 8-TSSOP |
In Stock360 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.4A 8-TSSOP |
In Stock215 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.4A |
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 830mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5.4A 1212-8 |
In Stock438 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.4A, 4.5A |
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.6W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® 1212-8 Dual |
Supplier Device Package: PowerPAK® 1212-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 7.6A PPAK SO-8 |
In Stock488 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 7.6A, 5.7A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 11.8A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.3A PPAK SO-8 |
In Stock326 More on Order |
|
Series: LITTLE FOOT® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.3A |
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6.4A PPAK SO-8 |
In Stock157 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6.4A |
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 7A PPAK SO-8 |
In Stock120 More on Order |
|
Series: TrenchFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.9A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7.2A PPAK SO-8 |
In Stock197 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 7.2A |
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 11.3A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
In Stock140 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 6.2A |
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SO-8 Dual |
Supplier Device Package: PowerPAK® SO-8 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 4.5A SC70-6 |
In Stock268 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 53mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V |
Power - Max: 6.5W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SC-70-6 Dual |
Supplier Device Package: PowerPAK® SC-70-6 Dual |
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.6A SC75-6 |
In Stock211 More on Order |
|
Series: TrenchFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.6A |
Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: PowerPAK® SC-75-6L Dual |
Supplier Device Package: PowerPAK® SC-75-6L Dual |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 9A/6.5A DPAK |
In Stock151 More on Order |
|
Series: PowerTrench® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: TO-252-4L |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 50V .1A SSMINI-6 |
In Stock364 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V |
Power - Max: 125mW |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini6-F2 |
|
|
Panasonic Electronic Components |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 50V/30V SSMINI-6 |
In Stock227 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V, 30V |
Current - Continuous Drain (Id) @ 25°C: 100mA |
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: 1.5V @ 1µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 125mW |
Operating Temperature: 125°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SSMini6-F2 |
|
|
Texas Instruments |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.2A 6DSBGA |
In Stock238 More on Order |
|
Series: NexFET™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.2A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 10V |
Power - Max: 800mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-UFBGA, DSBGA |
Supplier Device Package: 6-DSBGA (1x1.5) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.2A 6WDFN |
In Stock152 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V |
Power - Max: 710mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-WDFN (2x2) |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.2A 6WDFN |
In Stock356 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A |
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V |
Power - Max: 710mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-WDFN (2x2) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6WDFN |
In Stock376 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A |
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V |
Power - Max: 710mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-WDFN (2x2) |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6WDFN |
In Stock292 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.2A |
Rds On (Max) @ Id, Vgs: 68mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 10V |
Power - Max: 710mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-WDFN Exposed Pad |
Supplier Device Package: 6-WDFN (2x2) |
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|
Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 50V 0.16A SOT563 |
In Stock156 More on Order |
|
Series: - |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 50V |
Current - Continuous Drain (Id) @ 25°C: 160mA |
Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 25V |
Power - Max: 400mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: SOT-563 |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 7A/5A 8SOIC |
In Stock445 More on Order |
|
Series: PowerTrench® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A, 5A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 15V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 5A 6SSOT |
In Stock206 More on Order |
|
Series: PowerTrench® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 44mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 992pF @ 10V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP |
Supplier Device Package: SuperSOT™-6 |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5A 8-SOIC |
In Stock355 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V |
Power - Max: 900mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.3A SOT363 |
In Stock284 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 300mA |
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.39A SOT363 |
In Stock236 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 390mA |
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA |
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V |
Power - Max: 250mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V/30V 40A TO263 |
In Stock228 More on Order |
|
Series: OptiMOS™ |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V, 30V |
Current - Continuous Drain (Id) @ 25°C: 40A |
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 121nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V |
Power - Max: 69W, 96W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
Supplier Device Package: PG-TO263-5-1 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 55V/30V 40A TO220 |
In Stock432 More on Order |
|
Series: OptiMOS™ |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V, 30V |
Current - Continuous Drain (Id) @ 25°C: 40A |
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V |
Power - Max: 69W, 96W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: TO-220-5 |
Supplier Device Package: PG-TO220-5-13 |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 7A 8-SOIC |
In Stock402 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 26mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 562pF @ 10V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.7A 8-SOIC |
In Stock213 More on Order |
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Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.7A |
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A/11A 8-SOIC |
In Stock348 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A, 11A |
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 766pF @ 15V |
Power - Max: 1.5W, 2.4W |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |