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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 390/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock129 More on Order |
|
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 707pF @ 800V |
FET Feature: - |
Power Dissipation (Max): 115W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Single MOSFET N-CHAN 650V TO247AC |
In Stock261 More on Order |
|
Series: E |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 99A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 228nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7612pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 524W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247AC |
Package / Case: TO-247-3 |
|
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 600V 76A POWER MOSFET. R607 |
In Stock134 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 735W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single NCH 600V 76A POWER MOSFET. R607 |
In Stock287 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 600V |
Current - Continuous Drain (Id) @ 25°C: 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 735W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247 |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock267 More on Order |
|
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 1.06nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3-41 |
Package / Case: TO-247-3 |
|
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|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock320 More on Order |
|
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 5.6mA |
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 1.06nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 150W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
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|
IXYS |
Transistors - FETs, MOSFETs - Single 200V/300A ULTRA JUNCTION X3-CLAS |
In Stock160 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 300A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 60A MAX247 |
In Stock472 More on Order |
|
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 500V |
Current - Continuous Drain (Id) @ 25°C: 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 266nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 560W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: MAX247™ |
Package / Case: TO-247-3 |
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|
Vishay Semiconductor Diodes Division |
Transistors - FETs, MOSFETs - Single SINGLE SWITCH PWR MODULE SOT-227 |
In Stock377 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 287A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 200A, 10V |
Vgs(th) (Max) @ Id: 4.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 16500pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 937W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 |
Package / Case: SOT-227-4, miniBLOC |
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|
IXYS |
Transistors - FETs, MOSFETs - Single 2000V TO 3000V POLAR3 POWER MOSF |
In Stock461 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 3000V |
Current - Continuous Drain (Id) @ 25°C: 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 50Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 30.6nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 195W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: TO-268 |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 550V 48A ISOTOP |
In Stock381 More on Order |
|
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 550V |
Current - Continuous Drain (Id) @ 25°C: 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 117nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 450W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP® |
Package / Case: ISOTOP |
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|
IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 400A PLUS247 |
In Stock472 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1500W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS247™ |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock155 More on Order |
|
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 2.12nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-3-41 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single N-CHANNEL 650 V, 0.014 OHM TYP., |
In Stock259 More on Order |
|
Series: MDmesh™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 363nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 15600pF @ 100V |
FET Feature: - |
Power Dissipation (Max): 672W (Tc) |
Operating Temperature: 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP |
Package / Case: SOT-227-4, miniBLOC |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock117 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 1200V |
Current - Continuous Drain (Id) @ 25°C: 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id: 4V @ 4.4mA |
Gate Charge (Qg) (Max) @ Vgs: 106nC @ 18V |
Vgs (Max): +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 800V |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Single COOLSIC MOSFETS 1200V |
In Stock158 More on Order |
|
Series: CoolSiC™ |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V |
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 18V |
Vgs(th) (Max) @ Id: 5.7V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 18V |
Vgs (Max): +23V, -7V |
Input Capacitance (Ciss) (Max) @ Vds: 2.12nF @ 800V |
FET Feature: - |
Power Dissipation (Max): 227W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PG-TO247-4-1 |
Package / Case: TO-247-4 |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 400A SOT-227 |
In Stock489 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 400A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1070W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 80MOHM SOT |
In Stock173 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 35A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET 1KV 70A ULTRA JCT PLUS247 |
In Stock145 More on Order |
|
Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 89mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: 6V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 9160pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1785W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: PLUS264™ |
Package / Case: TO-264-3, TO-264AA |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 140A ISOTOP |
In Stock296 More on Order |
|
Series: STripFET™ II |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 200V |
Current - Continuous Drain (Id) @ 25°C: 140A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 338nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: ISOTOP |
Package / Case: SOT-227-4, miniBLOC |
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Cree/Wolfspeed |
Transistors - FETs, MOSFETs - Single 1200V, 21 MOHM, G3 SIC MOSFET |
In Stock343 More on Order |
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Series: * |
FET Type: - |
Technology: - |
Drain to Source Voltage (Vdss): - |
Current - Continuous Drain (Id) @ 25°C: - |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: - |
Mounting Type: - |
Supplier Device Package: - |
Package / Case: - |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 |
In Stock279 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 26mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V |
Vgs (Max): +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: H2PAK-7 |
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Single AUTOMOTIVE GRADE N-CHANNEL SIC P |
In Stock432 More on Order |
|
Series: Automotive, AEC-Q101 |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V |
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA |
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 18V |
Vgs (Max): +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: 1526pF @ 500V |
FET Feature: - |
Power Dissipation (Max): 262W |
Operating Temperature: 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247N |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 700V 15MOHM D3PA |
In Stock419 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 700V |
Current - Continuous Drain (Id) @ 25°C: 166A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 40MOHM SOT |
In Stock320 More on Order |
|
Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 208W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM TO- |
In Stock321 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 103A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 500W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: TO-247-3 |
Package / Case: TO-247-3 |
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STMicroelectronics |
Transistors - FETs, MOSFETs - Single SILICON CARBIDE POWER MOSFET 650 |
In Stock361 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): 650V |
Current - Continuous Drain (Id) @ 25°C: 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 18V |
Rds On (Max) @ Id, Vgs: 25mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 157nC @ 18V |
Vgs (Max): +22V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 400V |
FET Feature: - |
Power Dissipation (Max): 390W (Tc) |
Operating Temperature: -55°C ~ 200°C (TJ) |
Mounting Type: Through Hole |
Supplier Device Package: HiP247™ |
Package / Case: TO-247-3 |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM D3P |
In Stock109 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 100A |
Drive Voltage (Max Rds On, Min Rds On): - |
Rds On (Max) @ Id, Vgs: - |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Vgs (Max): - |
Input Capacitance (Ciss) (Max) @ Vds: - |
FET Feature: - |
Power Dissipation (Max): - |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D3Pak |
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
Transistors - FETs, MOSFETs - Single MOSFET 1000V 74A ULTRA JUNCTION |
In Stock257 More on Order |
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Series: HiPerFET™ |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 1000V |
Current - Continuous Drain (Id) @ 25°C: 74A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 66mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 1170W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227B |
Package / Case: SOT-227-4, miniBLOC |
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Microsemi |
Transistors - FETs, MOSFETs - Single GEN2 SIC MOSFET 1200V 25MOHM SOT |
In Stock499 More on Order |
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Series: - |
FET Type: N-Channel |
Technology: SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): 1.2kV |
Current - Continuous Drain (Id) @ 25°C: 77A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 20V |
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V |
Vgs (Max): +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V |
FET Feature: - |
Power Dissipation (Max): 278W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Chassis Mount |
Supplier Device Package: SOT-227 (ISOTOP®) |
Package / Case: SOT-227-4, miniBLOC |