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CategorySemiconductors / Transistors / FETs, MOSFETs - Single
Records 29,970
Page 841/999
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 14A 8-SOIC |
In Stock387 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 14A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V |
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 2335pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 13.6A 8-SOIC |
In Stock245 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 155°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 17.2A 8-SOIC |
In Stock473 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 17.2A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 5X6 PQFN |
In Stock327 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4175pF @ 30V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 156W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 17A 5X6 PQFN |
In Stock436 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4290pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 156W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A 5X6 PQFN |
In Stock167 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 250W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 5X6 PQFN |
In Stock142 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3090pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 114W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 5X6 PQFN |
In Stock199 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 37A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3152pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 114W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 16A 5X6 PQFN |
In Stock361 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 100W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 75V 5X6 PQFN |
In Stock190 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 75V |
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 105W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 10A 5X6 PQFN |
In Stock346 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 104W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 40A 5X6 PQFN |
In Stock444 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 46W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 100A 5X6 PQFN |
In Stock465 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V |
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 1.1V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 10890pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 156W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 24A 5X6 PQFN |
In Stock230 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 3100pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 3.1W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 11A 3X3 PQFN |
In Stock159 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 24A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V |
Rds On (Max) @ Id, Vgs: 10mOhm @ 11A, 20V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1543pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.8W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: PQFN (3x3) |
Package / Case: 8-PowerTDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 83A D2PAK |
In Stock498 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 150V |
Current - Continuous Drain (Id) @ 25°C: 83A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 10V |
Rds On (Max) @ Id, Vgs: 15mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id: 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 107nC @ 10V |
Vgs (Max): ±30V |
Input Capacitance (Ciss) (Max) @ Vds: 4530pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 330W (Tc) |
Operating Temperature: -40°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D2PAK |
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 100A 5X6 PQFN |
In Stock368 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 4730pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 156W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 100A 5X6 PQFN |
In Stock182 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 3.6W (Ta), 160W (Tc) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-PQFN (5x6) |
Package / Case: 8-PowerVDFN |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 4.2A SOT-23-3 |
In Stock411 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 1.25W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro3™/SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 3.7A SOT-23-3 |
In Stock115 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 10V |
FET Feature: - |
Power Dissipation (Max): 1.3W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: Micro3™/SOT-23 |
Package / Case: TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 16A DPAK |
In Stock189 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: 16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V |
Vgs (Max): ±16V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 35W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: D-Pak |
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 27A 8-SO |
In Stock457 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 27A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 27A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 4.5V |
Vgs (Max): ±12V |
Input Capacitance (Ciss) (Max) @ Vds: 8555pF @ 16V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V DIRECTFET S1 |
In Stock402 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 13V |
FET Feature: - |
Power Dissipation (Max): 1.8W (Ta), 26W (Tc) |
Operating Temperature: -55°C ~ 175°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET S1 |
Package / Case: DirectFET™ Isometric S1 |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V DIRECTFET MX |
In Stock173 More on Order |
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Series: HEXFET® |
FET Type: N-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 32A, 10V |
Vgs(th) (Max) @ Id: 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V |
FET Feature: Schottky Diode (Body) |
Power Dissipation (Max): 2.8W (Ta), 100W (Tc) |
Operating Temperature: -40°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: DIRECTFET™ MX |
Package / Case: DirectFET™ Isometric MX |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 16A 8-SO |
In Stock105 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2820pF @ 15V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 15A 8-SO |
In Stock494 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 2590pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12A 8-SO |
In Stock450 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 9.2A 8-SO |
In Stock159 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 19.4mOhm @ 9.2A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 5.4A 8-SO |
In Stock358 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Rds On (Max) @ Id, Vgs: 59mOhm @ 5.4A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 10µA |
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V |
Vgs (Max): ±20V |
Input Capacitance (Ciss) (Max) @ Vds: 386pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 12A 8-SO |
In Stock489 More on Order |
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Series: HEXFET® |
FET Type: P-Channel |
Technology: MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): 10V, 20V |
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 12A, 20V |
Vgs(th) (Max) @ Id: 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V |
Vgs (Max): ±25V |
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V |
FET Feature: - |
Power Dissipation (Max): 2.5W (Ta) |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Supplier Device Package: 8-SO |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |