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Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
1014-6A
1014-6A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55LV

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1GHz ~ 1.4GHz
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 19W
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
In Stock255

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1015MP
1015MP

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 10dB ~ 11dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
In Stock353

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1035MP
1035MP

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 10dB ~ 10.5dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
In Stock258

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10502
10502

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 55SM

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 8.5dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55SM
  • Supplier Device Package: 55SM
In Stock427

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1075MP
1075MP

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 7.6dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
In Stock373

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1090MP
1090MP

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55FW-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 8.08dB ~ 8.5dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 6.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
In Stock408

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10A015
10A015

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 2.7GHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.7GHz
  • Gain: 9dB ~ 9.5dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock269

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10A030
10A030

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 2.5GHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 2.5GHz
  • Gain: 7.8dB ~ 8.5dB
  • Power - Max: 13W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock357

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10A060
10A060

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 24V 1GHZ 55FT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 24V
  • Frequency - Transition: 1GHz
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 21W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 400mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
In Stock179

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1214-110M
1214-110M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 1.4GHZ 55KT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7.4dB
  • Power - Max: 270W
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
In Stock415

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1214-150L
1214-150L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.4GHZ 55ST-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7.15dB ~ 8.7dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
In Stock172

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1214-220M
1214-220M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.4GHZ 55ST

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7.4dB
  • Power - Max: 700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
In Stock438

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1214-30
1214-30

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock273

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1214-300
1214-300

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55KT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
In Stock312

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1214-300M
1214-300M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55ST

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7dB
  • Power - Max: 88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
In Stock393

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1214-32L
1214-32L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55AW-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7.8dB ~ 8.9dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
In Stock446

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1214-370M
1214-370M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 75V 1.4GHZ 55ST

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 8.7dB ~ 9dB
  • Power - Max: 600W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
In Stock153

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1214-55
1214-55

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 1.4GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 1.2GHz ~ 1.4GHz
  • Gain: 7dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock226

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1517-110M
1517-110M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.65GHZ 55AW-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Gain: 7.3dB ~ 8.6dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW-1
  • Supplier Device Package: 55AW-1
In Stock361

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1517-20M
1517-20M

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.65GHZ 55LV-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.48GHz ~ 1.65GHz
  • Gain: 7.6dB ~ 9.3dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV-1
  • Supplier Device Package: 55LV-1
In Stock121

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15GN01CA-TB-E
15GN01CA-TB-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 1.5GHZ 3CP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.5GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
In Stock308

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15GN01MA-TL-E
15GN01MA-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 1.5GHZ 3MCP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 1.5GHz
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Gull Wing
  • Supplier Device Package: 3-MCP
In Stock190

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15GN03CA-TB-E
15GN03CA-TB-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 1.5GHZ 3CP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
  • Gain: 13dB @ 0.4GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
In Stock4,116

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15GN03FA-TL-H
15GN03FA-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

TRANS NPN VHF-UHF 70A 10V SSFP

  • Manufacturer: ON Semiconductor
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-SSFP
In Stock369

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15GN03MA-TL-E
15GN03MA-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 1.5GHZ 3MCP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 1.6dB @ 0.4GHz
  • Gain: 13dB @ 0.4GHz
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: 3-MCP
In Stock3,712

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2001
2001

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 2GHZ 55BT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 2GHz
  • Gain: 9.5dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
In Stock449

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2003
2003

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 2GHZ 55BT-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 2GHz
  • Gain: 8.5dB
  • Power - Max: 12W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT-1
  • Supplier Device Package: 55BT-1
In Stock377

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2223-1.7
2223-1.7

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock164

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2224-12LP
2224-12LP

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock112

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2224-6L
2224-6L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 2.4GHZ 55LV

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 2.2GHz ~ 2.4GHz
  • Gain: 7dB
  • Power - Max: 22W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 1.25A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
In Stock337

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