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Transistors

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2N5770_D26Z
2N5770_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock393

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2N5770_D27Z
2N5770_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock446

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2N5770_D74Z
2N5770_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock343

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2N5770_D75Z
2N5770_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock451

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2N918
2N918

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ TO72

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60kHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock2,573

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2SA1748GRL
2SA1748GRL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 50V 250MHZ SMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 250MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
In Stock166

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2SA1790GCL
2SA1790GCL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 300MHZ SSMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 300MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3
In Stock4,978

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2SA1977-A
2SA1977-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 8.5GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock223

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2SA1977-T1B-A

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 8.5GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock257

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2SA1978-A
2SA1978-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 5.5GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock465

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2SA1978-T1B-A

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 5.5GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock373

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2SC22950BL
2SC22950BL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 250MHZ MINI3-G1

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
In Stock408

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2SC24040CL
2SC24040CL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ MINI3-G1

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
In Stock433

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2SC24040DL
2SC24040DL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ MINI3-G1

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
In Stock297

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2SC2714-O(TE85L,F)
2SC2714-O(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 550MHZ SMINI

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
In Stock4,994

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2SC2714-Y(TE85L,F)
2SC2714-Y(TE85L,F)

Toshiba Semiconductor and Storage

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 550MHZ SMINI

  • Manufacturer: Toshiba Semiconductor and Storage
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 550MHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 100MHz
  • Gain: 23dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
In Stock3,605

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2SC27780CL
2SC27780CL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 230MHZ MINI3-G1

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 230MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
In Stock3,826

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2SC3356-A
2SC3356-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock275

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2SC3356-T1B-R24-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock392

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2SC3356-T1B-R25-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ SOT23-3

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock420

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2SC3357-A
2SC3357-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.5GHZ SOT89

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
In Stock344

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2SC3357-T1-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.5GHZ SOT89

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
In Stock382

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2SC3357-T1-RF-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.5GHZ SOT89

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
In Stock495

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2SC3583-A
2SC3583-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ SOT23-3

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 15dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock117

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2SC3583-T1B-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock274

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2SC3585-A
2SC3585-A

CEL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 10GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 10dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
In Stock410

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2SC3585-T1B-A

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 10GHZ SOT23

  • Manufacturer: CEL
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock455

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2SC39300CL
2SC39300CL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 250MHZ SMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
In Stock175

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2SC39310CL
2SC39310CL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
In Stock139

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2SC3931GCL
2SC3931GCL

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2
In Stock199

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