Transistors | OEMstron

Bipolar (BJT) - Arrays (1,432)
Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Bipolar (BJT) - RF (1,506)
Bipolar (BJT) - Single (13,715)
Bipolar (BJT) - Single, Pre-Biased (3,282)
FETs, MOSFETs - Arrays (3,829)
FETs, MOSFETs - RF (3,043)
FETs, MOSFETs - Single (29,970)
IGBTs - Arrays (18)
IGBTs - Modules (2,367)
IGBTs - Single (3,305)
JFETs (664)
Programmable Unijunction (26)
Special Purpose (162)

Records 64,903

Page 103/2164

Part Number	Description	In Stock
2224-6P Microsemi	Transistors - Bipolar (BJT) - RF RF POWER TRANSISTOR Manufacturer: Microsemi Corporation	In Stock413 More on Order
2225-4L Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 2.5GHZ 55LV Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.2GHz ~ 2.5GHz Gain: 8.5dB Power - Max: 10W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55LV Supplier Device Package: 55LV	In Stock263 More on Order
2301 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 2.3GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Gain: 8dB Power - Max: 5.6W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock458 More on Order
2304 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 45V 2.3GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 45V Frequency - Transition: 2.3GHz Gain: 8dB Power - Max: 10.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 600mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock487 More on Order
2307 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 42V 2.3GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 42V Frequency - Transition: 2.3GHz Gain: 8dB Power - Max: 20.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock334 More on Order
2324-20 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 40V 2.4GHZ 55AW Manufacturer: Microsemi Corporation Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 2.3GHz ~ 2.4GHz Gain: 7dB Power - Max: 58W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 160mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	In Stock258 More on Order
23A005 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 22V 4.3GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 4.3GHz Gain: 8.5dB ~ 9.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock243 More on Order
23A008 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 22V 3.7GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Gain: 8.5dB ~ 9.5dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock272 More on Order
23A025 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 22V 3.7GHZ 55BT Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.7GHz Gain: 6dB ~ 6.3dB Power - Max: 9W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 420mA, 5V Current - Collector (Ic) (Max): 1.2A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55BT Supplier Device Package: 55BT	In Stock150 More on Order
2731-200P Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS 3.1GHZ MODULE Manufacturer: Microsemi Corporation Frequency - Transition: 2.7GHz ~ 3.1GHz Gain: 8.7dB Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	In Stock111 More on Order
2A5 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 22V 3.7GHZ 55ET Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 22V Frequency - Transition: 3.4GHz ~ 3.7GHz Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 3mA Operating Temperature: 200°C (TJ) Mounting Type: Stud Mount Package / Case: 55ET Supplier Device Package: 55ET	In Stock158 More on Order
2A8 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 21V 2GHZ 55EU Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 21V Frequency - Transition: 2GHz Gain: 7dB ~ 9dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: 55EU Supplier Device Package: 55EU	In Stock282 More on Order
2N2857 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 500MHZ TO72 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock230 More on Order
2N2857 MICROSS/On Semiconductor	Transistors - Bipolar (BJT) - RF DIE RF TRANS NPN 15V Manufacturer: MICROSS/On Semiconductor Series: *	In Stock237 More on Order
2N2857 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 1.9GHZ TO72 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.9GHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock3,867 More on Order
2N2857UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 0.04A UB Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock432 More on Order
2N3663 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2.1GHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2.1GHz Noise Figure (dB Typ @ f): 6.5dB @ 60MHz Gain: 1.5dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock297 More on Order
2N3866 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 500MHZ TO39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 500MHz Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock383 More on Order
2N3866A Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 400MHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 400MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock447 More on Order
2N4427 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 40V 500MHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Gain: 10dB @ 175MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock320 More on Order
2N4427 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 500MHZ TO39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 500MHz Gain: 10dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock1,861 More on Order
2N4957 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA TO72 Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock308 More on Order
2N4957UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock407 More on Order
2N5031 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 10V 400MHZ TO72 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 400MHz Gain: 12dB @ 400MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock349 More on Order
2N5109 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.2GHZ TO39 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Gain: 12dB Power - Max: 2.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock220 More on Order
2N5109 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 1.2GHZ TO39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock4,173 More on Order
2N5179 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 200MHZ TO72 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 20dB Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock403 More on Order
2N5179 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 12V 2GHZ TO72 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	In Stock686 More on Order
2N5770 ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock439 More on Order
2N5770 Central Semiconductor Corp	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 900MHZ TO92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 900MHz Noise Figure (dB Typ @ f): 6dB @ 60MHz Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock6,299 More on Order

«
‹
1
...
100
101
102
103 (current)
104
105
106
...
2164
›
»