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Transistors

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Part Number
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MRF8372GR1
MRF8372GR1

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V 870MHZ 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock469

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MRF8372GR2
MRF8372GR2

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V 870MHZ 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock349

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MRF8372MR1
MRF8372MR1

Microsemi

Transistors - Bipolar (BJT) - RF

TRANS NPN 16V 200MA

  • Manufacturer: Microsemi Corporation
In Stock314

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MRF8372R1
MRF8372R1

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V 870MHZ 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock161

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MRF8372R2
MRF8372R2

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 16V 870MHZ 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Gain: 8dB ~ 9.5dB
  • Power - Max: 2.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock264

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MRF904
MRF904

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 4GHZ TO72

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 450MHz
  • Gain: 6.5dB ~ 10.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock115

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MRFC544
MRFC544

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock109

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MRFC545
MRFC545

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock226

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MS1001
MS1001

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 30MHZ M174

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Gain: 13dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
In Stock250

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MS1001A
MS1001A

Microsemi

Transistors - Bipolar (BJT) - RF

TRANS RF BIPO 270W 20A

  • Manufacturer: Microsemi Corporation
In Stock482

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MS1003
MS1003

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ M111

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 136MHz ~ 175MHz
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
In Stock455

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MS1004
MS1004

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M177

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Gain: 14.5dB
  • Power - Max: 330W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 6V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M177
  • Supplier Device Package: M177
In Stock461

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MS1006
MS1006

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Gain: 14dB
  • Power - Max: 127W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 19 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 3.25A
  • Operating Temperature: 200°C
  • Mounting Type: Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock279

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MS1007
MS1007

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M174

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
In Stock222

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MS1008
MS1008

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 30MHZ M164

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M164
  • Supplier Device Package: M164
In Stock447

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MS1014
MS1014

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock311

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MS1015D
MS1015D

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock230

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MS1019
MS1019

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock406

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MS1030
MS1030

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock196

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MS1030DE
MS1030DE

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock497

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MS1051
MS1051

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 30MHZ M174

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
In Stock455

More on Order

MS1076
MS1076

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 30MHZ M174

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 30MHz
  • Gain: 12dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
In Stock395

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MS1076A
MS1076A

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock177

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MS1076C
MS1076C

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock396

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MS1087T
MS1087T

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock436

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MS1202
MS1202

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 136MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 118MHz ~ 136MHz
  • Gain: 8.4dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock379

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MS1226
MS1226

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 36V 30MHZ M113

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Frequency - Transition: 30MHz
  • Gain: 18dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock339

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MS1227
MS1227

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 30MHZ M113

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
In Stock144

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MS1261
MS1261

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ M122

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Gain: 12dB
  • Power - Max: 34W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
In Stock189

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MS1336
MS1336

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 175MHZ M135

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
In Stock200

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