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Transistors

Records 64,903
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Part Number
Description
In Stock
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2N2222
2N2222

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS NPN MED PWR GEN PURP

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
In Stock221

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2N2222
2N2222

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.8A TO-18

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock5,227

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2N2222A
2N2222A

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 0.6A TO-18

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock486

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2N2222A
2N2222A

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN MED PWR GEN PUR (TO-18 CASE)

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock165

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2N2222A
2N2222A

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS NPN MED PWR GEN PURP

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
In Stock338

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2N2222A
2N2222A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A TO-18

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock151

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2N2222A
2N2222A

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 40V 0.8A TO-18

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock84,578

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2N2222AE3
2N2222AE3

Microsemi

Transistors - Bipolar (BJT) - Single

SMALL-SIGNAL BJT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock468

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2N2222AE4
2N2222AE4

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A TO-18

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock426

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2N2222AL
2N2222AL

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A TO-18

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock434

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2N2222AUA
2N2222AUA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A 4PIN SMD

  • Manufacturer: Microsemi Corporation
  • Series: 2N2222
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD
  • Supplier Device Package: 4-SMD
In Stock259

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2N2222AUA
2N2222AUA

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMD

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-CLCC
  • Supplier Device Package: Ceramic SMD
In Stock446

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2N2222AUATX
2N2222AUATX

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMT

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-CLCC
  • Supplier Device Package: 4-CLCC (5.59x3.81)
In Stock474

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2N2222AUATXV
2N2222AUATXV

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMT

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-CLCC
  • Supplier Device Package: 4-CLCC (5.59x3.81)
In Stock477

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2N2222AUB
2N2222AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A 3PIN SMD

  • Manufacturer: Microsemi Corporation
  • Series: 2N2222
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: 3-SMD
In Stock418

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2N2222AUB
2N2222AUB

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMD

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 15mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 300mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-LCC
  • Supplier Device Package: Ceramic SMD
In Stock697

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2N2222AUBTX
2N2222AUBTX

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMT

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 15mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 300mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-CLCC
  • Supplier Device Package: 4-CLCC (3.05x2.415)
In Stock499

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2N2222AUBTXV
2N2222AUBTXV

TT Electronics/Optek Technology

Transistors - Bipolar (BJT) - Single

TRANS NPN 50V 0.8A SMT

  • Manufacturer: TT Electronics/Optek Technology
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 15mA, 500mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1mA, 10V
  • Power - Max: 300mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-CLCC
  • Supplier Device Package: 4-CLCC (3.05x2.415)
In Stock412

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2N2270
2N2270

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 45V 1A TO-39

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock761

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2N2368
2N2368

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

THROUGH-HOLE TRANSISTOR-SMALL SI

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector Cutoff (Max): 400mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
  • Frequency - Transition: 400MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock117

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2N2369
2N2369

ON Semiconductor

Transistors - Bipolar (BJT) - Single

NPN MED PWR HS TRANSISTOR

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 360mW
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock336

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2N2369A
2N2369A

STMicroelectronics

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.2A TO-18

  • Manufacturer: STMicroelectronics
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
  • Power - Max: 360mW
  • Frequency - Transition: 675MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock392

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2N2369A
2N2369A

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - Single

DIE TRANS NPN MED PWR HS SWITCH

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
  • Mounting Type: Through Hole
In Stock415

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2N2369A
2N2369A

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V TO18

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock1,621

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2N2369A
2N2369A

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V 0.2A TO-18

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200mA
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 350mV
  • Power - Max: 360mW
  • Frequency - Transition: 500MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
In Stock5,004

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2N2369AU
2N2369AU

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V SMD

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 500mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMD
In Stock110

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2N2369AUA
2N2369AUA

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V SMD

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD
  • Supplier Device Package: SMD
In Stock179

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2N2369AUB
2N2369AUB

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 15V SMD

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360mW
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD
  • Supplier Device Package: SMD
In Stock137

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2N2405
2N2405

Central Semiconductor Corp

Transistors - Bipolar (BJT) - Single

TRANS NPN 90V 1A TO-39

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 90V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 15mA, 150mA
  • Current - Collector Cutoff (Max): 10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 120MHz
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock586

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2N2432
2N2432

Microsemi

Transistors - Bipolar (BJT) - Single

TRANS NPN 30V 0.1A

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
  • Power - Max: 300mW
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18 (TO-206AA)
In Stock441

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