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Bipolar (BJT) - Arrays (1,432)
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Page 159/2164

Part Number	Description	In Stock
2N2945A Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock316 More on Order
2N2945AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 20V 0.1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock211 More on Order
2N2946A Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 35V 0.1A TO-46 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 35V Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-46-3 Supplier Device Package: TO-46-3	In Stock170 More on Order
2N2946AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 35V 0.1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 35V Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock478 More on Order
2N3013 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN HS MED PWR SWITCH Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 360mW Frequency - Transition: 350MHz Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock245 More on Order
2N3014 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN HS MED PWR SWITCH Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 350mV @ 10mA, 100mA Current - Collector Cutoff (Max): 300nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 400mV Power - Max: 300mW Frequency - Transition: 350MHz Mounting Type: Through Hole Package / Case: TO-206AC, TO-52-3 Metal Can Supplier Device Package: TO-52-3	In Stock168 More on Order
2N3019 STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO-39 Manufacturer: STMicroelectronics Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock260 More on Order
2N3019 MICROSS/On Semiconductor	Transistors - Bipolar (BJT) - Single DIE TRANS NPN SMALL SIGNAL 80V Manufacturer: MICROSS/On Semiconductor Series: *	In Stock477 More on Order
2N3019 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 800mW Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock268 More on Order
2N3019 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO-5 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock613 More on Order
2N3019S Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock283 More on Order
2N3053 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 40V 0.7A TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock2,215 More on Order
2N3053A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 700mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Power - Max: 5W Frequency - Transition: 100MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock285 More on Order
2N3055 STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 15A TO-3 Manufacturer: STMicroelectronics Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 115W Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	In Stock233 More on Order
2N3055 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 70V Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 115W Frequency - Transition: 2.5MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	In Stock252 More on Order
2N3055AG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 15A TO-3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V Power - Max: 115W Frequency - Transition: 6MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock1,560 More on Order
2N3055G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 15A TO3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 115W Frequency - Transition: 2.5MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock7,031 More on Order
2N3055H ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 15A TO-3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 115W Frequency - Transition: 2.5MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock417 More on Order
2N3055HG ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 15A TO-3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Power - Max: 115W Frequency - Transition: 2.5MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock293 More on Order
2N3057A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 80V 1A TO-46 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock394 More on Order
2N3108 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN SS AMP 5W TRANSISTOR Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA,1V Power - Max: 800mW Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock190 More on Order
2N3117 MICROSS/On Semiconductor	Transistors - Bipolar (BJT) - Single DIE TRANS NPN SMALL SIGNAL 60V Manufacturer: MICROSS/On Semiconductor Series: *	In Stock296 More on Order
2N3117 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO-18 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10µA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock2,333 More on Order
2N3250 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS PNP 40V 0.2A TO-18 Manufacturer: Central Semiconductor Corp Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 360mW Frequency - Transition: 250MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock3,346 More on Order
2N3250A Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.2A TO18 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock416 More on Order
2N3251A MICROSS/On Semiconductor	Transistors - Bipolar (BJT) - Single DIE TRANS PNP SMALL SIGNAL 60V Manufacturer: MICROSS/On Semiconductor Series: *	In Stock147 More on Order
2N3251A Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.2A TO-39 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock149 More on Order
2N3251AUB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.2A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock292 More on Order
2N3253 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 75V 500NA TO39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 1V Frequency - Transition: 175MHz Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock320 More on Order
2N327A Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock162 More on Order

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