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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 157/2164

Part Number	Description	In Stock
2N2432A Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 30V 0.1A Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 300mW Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	In Stock450 More on Order
2N2432AUB Microsemi	Transistors - Bipolar (BJT) - Single BJTS Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	In Stock157 More on Order
2N2432UB Microsemi	Transistors - Bipolar (BJT) - Single BJTS Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB	In Stock147 More on Order
2N2481 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock104 More on Order
2N2484 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN LL LN AMP TRANSISTOR Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2mA, 5V Power - Max: 360mW Mounting Type: Through Hole Package / Case: TO-18-2 Metal Can Supplier Device Package: TO-18	In Stock420 More on Order
2N2484 MICROSS/On Semiconductor	Transistors - Bipolar (BJT) - Single DIE TRANS NPN LOW NOISE Manufacturer: MICROSS/On Semiconductor Series: *	In Stock139 More on Order
2N2484 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO-18 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock631 More on Order
2N2484 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A TO-18 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 350mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10µA, 5V Power - Max: 360mW Frequency - Transition: 60MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock2,752 More on Order
2N2484UA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UA	In Stock177 More on Order
2N2484UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 60V 0.05A SMD Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock438 More on Order
2N2604 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock274 More on Order
2N2605 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.03A TO-46 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock320 More on Order
2N2605UB Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock217 More on Order
2N2811 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock237 More on Order
2N2812 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock351 More on Order
2N2813 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock294 More on Order
2N2814 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock128 More on Order
2N2880 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock200 More on Order
2N2895 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock253 More on Order
2N2896 Microsemi	Transistors - Bipolar (BJT) - Single BJTS Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 90V Vce Saturation (Max) @ Ib, Ic: 600mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 150mA, 10V Power - Max: 1.8W Frequency - Transition: 120MHz Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18	In Stock434 More on Order
2N2904 ON Semiconductor	Transistors - Bipolar (BJT) - Single PNP SS GP AMP MED PWR TRANS. Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 600mW Mounting Type: Surface Mount Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock332 More on Order
2N2904 Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock134 More on Order
2N2904 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 3W Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock298 More on Order
2N2904A Microsemi	Transistors - Bipolar (BJT) - Single PNP TRANSISTOR Manufacturer: Microsemi Corporation Series: *	In Stock273 More on Order
2N2904A Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock1,879 More on Order
2N2904AL Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO5 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock456 More on Order
2N2905 ON Semiconductor	Transistors - Bipolar (BJT) - Single PNP SS GP AMP MED PWR TRANS. Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock187 More on Order
2N2905 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 3W Frequency - Transition: 200MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock341 More on Order
2N2905A STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-39 Manufacturer: STMicroelectronics Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Frequency - Transition: 200MHz Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock426 More on Order
2N2905A ON Semiconductor	Transistors - Bipolar (BJT) - Single PNP SS GP AMP MED PWR TRANS. Manufacturer: ON Semiconductor Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 600mW Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock490 More on Order

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