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Records 64,903

Page 163/2164

Part Number	Description	In Stock
2N3501 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Frequency - Transition: 150MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock459 More on Order
2N3501 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock319 More on Order
2N3501L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A TO-5 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock182 More on Order
2N3501UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/366 Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 500mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock357 More on Order
2N3506A Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock134 More on Order
2N3506AL Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock312 More on Order
2N3506L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock221 More on Order
2N3507 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock287 More on Order
2N3507AL Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock106 More on Order
2N3507AU4 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/349 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A Current - Collector Cutoff (Max): 1μA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	In Stock348 More on Order
2N3507L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock370 More on Order
2N3507U4 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock336 More on Order
2N3563 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-106 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V Frequency - Transition: 600MHz Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	In Stock430 More on Order
2N3564 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-106 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V Frequency - Transition: 400MHz Mounting Type: Through Hole Package / Case: TO-106-3 Domed Supplier Device Package: TO-106	In Stock419 More on Order
2N3565 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANSISTOR NPN TO-106 Manufacturer: Central Semiconductor Corp	In Stock281 More on Order
2N3583 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 175V 1A TO-66 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 5V @ 125mA, 1A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 10V Power - Max: 35W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock1,367 More on Order
2N3584 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock275 More on Order
2N3584 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 250V 2A TO-66 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 35W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock685 More on Order
2N3585 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock408 More on Order
2N3585 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 300V 2A TO-66 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 10V Power - Max: 35W Frequency - Transition: 10MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-213AA, TO-66-2 Supplier Device Package: TO-66	In Stock493 More on Order
2N3634 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock411 More on Order
2N3634L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock374 More on Order
2N3634UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock247 More on Order
2N3635 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock269 More on Order
2N3635L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock150 More on Order
2N3635UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 140V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock378 More on Order
2N3636 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock261 More on Order
2N3636L Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock488 More on Order
2N3636UB Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 175V 1A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 175V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Power - Max: 1.5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-SMD	In Stock362 More on Order
2N3637 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock213 More on Order

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