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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 162/2164

Part Number	Description	In Stock
2N3439 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2mA, 10V Power - Max: 1W Frequency - Transition: 15MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock362 More on Order
2N3439L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 1A TO-5 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock390 More on Order
2N3439U4 Microsemi	Transistors - Bipolar (BJT) - Single NPN TRANSISTOR Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	In Stock376 More on Order
2N3439UA Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 1A UA Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead	In Stock259 More on Order
2N3440 STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A TO-39 Manufacturer: STMicroelectronics Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 15MHz Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock274 More on Order
2N3440 ON Semiconductor	Transistors - Bipolar (BJT) - Single NPN POWER 350V 10W TRANSISTOR Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock139 More on Order
2N3440 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock1,398 More on Order
2N3440 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 250V TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 250V Current - Collector Cutoff (Max): 20µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 15MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock8,790 More on Order
2N3440L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 250V 1A TO-5 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 800mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock234 More on Order
2N3440U4 Microsemi	Transistors - Bipolar (BJT) - Single POWER BJT Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 250V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 5W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: U4	In Stock392 More on Order
2N3440UA Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock334 More on Order
2N3442 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 140V 10A TO3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 117W Frequency - Transition: 80MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock430 More on Order
2N3442 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock140 More on Order
2N3442 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 140V 10A TO-3 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 117W Frequency - Transition: 80kHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-3	In Stock506 More on Order
2N3442G ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 140V 10A TO3 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 140V Vce Saturation (Max) @ Ib, Ic: 5V @ 2A, 10A Current - Collector Cutoff (Max): 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Power - Max: 117W Frequency - Transition: 80kHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Supplier Device Package: TO-204 (TO-3)	In Stock631 More on Order
2N3467 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock170 More on Order
2N3467 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS PNP 40V 1A TO-39 Manufacturer: Central Semiconductor Corp Transistor Type: PNP Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V Power - Max: 1W Frequency - Transition: 175MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock956 More on Order
2N3467L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock208 More on Order
2N3468 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock482 More on Order
2N3468L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock441 More on Order
2N3469 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock213 More on Order
2N3485A Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46 (TO-206AB)	In Stock395 More on Order
2N3486 Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A Manufacturer: Microsemi Corporation Series: * Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46	In Stock245 More on Order
2N3486A Microsemi	Transistors - Bipolar (BJT) - Single TRANS PNP 60V 0.6A TO-46 Manufacturer: Microsemi Corporation Transistor Type: PNP Current - Collector (Ic) (Max): 600mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 400mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Supplier Device Package: TO-46-3	In Stock187 More on Order
2N3498 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock445 More on Order
2N3498L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock274 More on Order
2N3499 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock421 More on Order
2N3499L Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 100V 0.5A TO5 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 1.4V @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AA, TO-5-3 Metal Can Supplier Device Package: TO-5	In Stock263 More on Order
2N3500 Microsemi	Transistors - Bipolar (BJT) - Single TRANS NPN 150V 0.3A TO-39 Manufacturer: Microsemi Corporation Transistor Type: NPN Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Power - Max: 1W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39 (TO-205AD)	In Stock412 More on Order
2N3500L Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock258 More on Order

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