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Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 161/2164

Part Number	Description	In Stock
2N3415 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 1.5W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock182 More on Order
2N3415_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 25V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock472 More on Order
2N3415_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 25V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock473 More on Order
2N3415_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 25V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock273 More on Order
2N3415_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 25V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 25V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock220 More on Order
2N3416 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock199 More on Order
2N3416 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 50V TO-92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock3,915 More on Order
2N3416_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock260 More on Order
2N3416_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock212 More on Order
2N3416_D29Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock120 More on Order
2N3416_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock304 More on Order
2N3417 ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock292 More on Order
2N3417 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 50V TO-92 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock2,722 More on Order
2N3417 APM Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single THROUGH-HOLE TRANSISTOR-SMALL SI Manufacturer: Central Semiconductor Corp Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 1.5W Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92	In Stock382 More on Order
2N3417_D26Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock129 More on Order
2N3417_D27Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock106 More on Order
2N3417_D74Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock119 More on Order
2N3417_D75Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock406 More on Order
2N3417_D89Z ON Semiconductor	Transistors - Bipolar (BJT) - Single TRANS NPN 50V 0.5A TO-92 Manufacturer: ON Semiconductor Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V Power - Max: 625mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock314 More on Order
2N3418 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock346 More on Order
2N3418S Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock314 More on Order
2N3419 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock245 More on Order
2N3419S Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock367 More on Order
2N3420 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock247 More on Order
2N3420S Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock377 More on Order
2N3421 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock251 More on Order
2N3421 Central Semiconductor Corp	Transistors - Bipolar (BJT) - Single TRANS NPN 80V TO39 Manufacturer: Central Semiconductor Corp Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 80V Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 2V Frequency - Transition: 40MHz Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock740 More on Order
2N3421S Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock173 More on Order
2N3421U4 Microsemi	Transistors - Bipolar (BJT) - Single NPN POWER SILICON TRANSISTORS Manufacturer: Microsemi Corporation Series: *	In Stock153 More on Order
2N3439 STMicroelectronics	Transistors - Bipolar (BJT) - Single TRANS NPN 350V 1A TO-39 Manufacturer: STMicroelectronics Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 350V Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Power - Max: 1W Frequency - Transition: 15MHz Operating Temperature: 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	In Stock371 More on Order

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