Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SOT-363 |
In Stock241 More on Order |
|
Series: OptiMOS™ |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA |
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA |
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 1.5A 6TSOP |
In Stock359 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA |
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V TSOP-6 |
In Stock172 More on Order |
|
Series: OptiMOS™ |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A |
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id: 2V @ 3.7µA |
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.25A CST6D |
In Stock228 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 250mA |
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 100mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 10V |
Power - Max: 140mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-SMD, Flat Leads |
Supplier Device Package: CST6D |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.8A ES6 |
In Stock284 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 800mA |
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 10V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A ES6 |
In Stock476 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V |
Power - Max: 150mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-563, SOT-666 |
Supplier Device Package: ES6 (1.6x1.6) |
|
|
Toshiba Semiconductor and Storage |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.2A US6 |
In Stock246 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 60V |
Current - Continuous Drain (Id) @ 25°C: 200mA |
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: 3.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V |
Power - Max: 300mW |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: US6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 0.95A SOT363 |
In Stock371 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 950mA |
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA |
Gate Charge (Qg) (Max) @ Vgs: 0.32nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-VSSOP, SC-88, SOT-363 |
Supplier Device Package: PG-SOT363-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.5A 6TSOP |
In Stock249 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A |
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 11µA |
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 1.5A TSOP-6 |
In Stock468 More on Order |
|
Series: OptiMOS™ |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA |
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 1.5A TSOP-6 |
In Stock197 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 11µA |
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 2.3A 6TSOP |
In Stock141 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 2.3A |
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: 2V @ 11µA |
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 30V 1.5A TSOP-6 |
In Stock371 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.5A |
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 2V @ 11µA |
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V |
Power - Max: 500mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: PG-TSOP-6-6 |
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 5.4A 8DSO |
In Stock393 More on Order |
|
Series: OptiMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 5.4A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V |
Power - Max: 1.4W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: PG-DSO-8 |
|
|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SC88-6 |
In Stock324 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA |
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V |
Power - Max: 270mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-88/SC70-6/SOT-363 |
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|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 100V 3A 8SOIC |
In Stock254 More on Order |
|
Series: TrenchMOS™ |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 3A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 633pF @ 20V |
Power - Max: 2W |
Operating Temperature: -65°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Nexperia |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 55V 20SOIC |
In Stock293 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 55V |
Current - Continuous Drain (Id) @ 25°C: - |
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: - |
Gate Charge (Qg) (Max) @ Vgs: - |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: - |
Operating Temperature: - |
Mounting Type: Surface Mount |
Package / Case: 20-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: 20-SO |
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|
ON Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 80V 1.1A 8SOIC |
In Stock317 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 80V |
Current - Continuous Drain (Id) @ 25°C: 1.1A |
Rds On (Max) @ Id, Vgs: 215mOhm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V |
Power - Max: 600mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOIC |
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Diodes Incorporated |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9.5A 8SO |
In Stock394 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9.5A |
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V |
Power - Max: 1.19W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 3.5A 8SOIC |
In Stock107 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 5A 8SOIC |
In Stock423 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 6A 8SOIC |
In Stock112 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 7A 8SOIC |
In Stock177 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 7A |
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 9A 8SOIC |
In Stock213 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 9A |
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 45V 4.5A 8SOIC |
In Stock452 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 4.5A |
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 45V 6A 8SOIC |
In Stock142 More on Order |
|
Series: - |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 45V |
Current - Continuous Drain (Id) @ 25°C: 6A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 21.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 3.5A 8SOIC |
In Stock346 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 3.5A |
Rds On (Max) @ Id, Vgs: 83mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/3.5A 8SOIC |
In Stock450 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 3.5A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
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Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 5A/7A 8SOIC |
In Stock439 More on Order |
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Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 5A, 7A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |
|
|
Rohm Semiconductor |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V 6A/4.5A 8SOIC |
In Stock465 More on Order |
|
Series: - |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V |
Power - Max: 2W |
Operating Temperature: 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SOP |