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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 104/128
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.9A 6-TSOP |
In Stock287 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.9A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 16V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 2.2A 6-TSOP |
In Stock478 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.2A |
Rds On (Max) @ Id, Vgs: 135mOhm @ 2.2A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 2.7A 6-TSOP |
In Stock132 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A, 2.2A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 2.7A 6-TSOP |
In Stock443 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.7A |
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V |
Power - Max: 960mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 12V 6.3A 8-SOIC |
In Stock116 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 6.3A, 3A |
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 9V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 100V 2.1A 8-SOIC |
In Stock393 More on Order |
|
Series: HEXFET® |
FET Type: N and P-Channel |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 100V |
Current - Continuous Drain (Id) @ 25°C: 2.1A, 1.5A |
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V |
Power - Max: 2W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 4.6A 8TSSOP |
In Stock296 More on Order |
|
Series: HEXFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 4.6A |
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 12V 5.5A 8TSSOP |
In Stock336 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 12V |
Current - Continuous Drain (Id) @ 25°C: 5.5A |
Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V |
Vgs(th) (Max) @ Id: 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1984pF @ 6V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Infineon Technologies |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 3.9A 8TSSOP |
In Stock256 More on Order |
|
Series: HEXFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 3.9A |
Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id: 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 15V |
Power - Max: 1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: 8-TSSOP |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V SC70-6 |
In Stock357 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 540mA, 420mA |
Rds On (Max) @ Id, Vgs: 480mOhm @ 590mA, 10V |
Vgs(th) (Max) @ Id: 2.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 270mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SC70-6 |
In Stock409 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 290mA, 410mA |
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 290mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 270mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
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|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V SC70-6 |
In Stock208 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA |
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V |
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 270mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
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|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 1.13A SC70-6 |
In Stock194 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA |
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 570mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
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|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2P-CH 20V 0.41A SC70-6 |
In Stock440 More on Order |
|
Series: TrenchFET® |
FET Type: 2 P-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 410mA |
Rds On (Max) @ Id, Vgs: 995mOhm @ 410mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 270mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
|
|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 1.3A SC-70-6 |
In Stock360 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 1.3A |
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.3A, 10V |
Vgs(th) (Max) @ Id: 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
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|
|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 20V 1.3A SC-70-6 |
In Stock326 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.3A |
Rds On (Max) @ Id, Vgs: 168mOhm @ 1.4A, 4.5V |
Vgs(th) (Max) @ Id: 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V |
Power - Max: 1.25W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: SC-70-6 (SOT-363) |
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|
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 2A 6-TSOP |
In Stock307 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A |
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 830mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 2.9A 6-TSOP |
In Stock236 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A |
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.4A, 4.5V |
Vgs(th) (Max) @ Id: 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 830mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 2.5A 6-TSOP |
In Stock163 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA |
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 830mW, 83mW |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 1.4A 6-TSOP |
In Stock242 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 1.4A, 960mA |
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.08W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: 6-TSOP |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock284 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V |
Power - Max: 3.6W, 2.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 6.6A 8-SOIC |
In Stock195 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 6.6A, 3.8A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 4.5V |
Vgs(th) (Max) @ Id: 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 30V/8V 8-SOIC |
In Stock320 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel, Common Drain |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V, 8V |
Current - Continuous Drain (Id) @ 25°C: 6.3A, 4.1A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 8.8A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.3W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 7.2A 8-SOIC |
In Stock333 More on Order |
|
Series: TrenchFET® |
FET Type: N and P-Channel |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 20V |
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A |
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id: 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: - |
Power - Max: 1.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock201 More on Order |
|
Series: SkyFET®, TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id: 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V |
Power - Max: 3.3W, 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock249 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 25V 8A 8SOIC |
In Stock270 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 25V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 13V |
Power - Max: 2.8W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 30V 8A 8-SOIC |
In Stock359 More on Order |
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Series: LITTLE FOOT® |
FET Type: 2 N-Channel (Half Bridge) |
FET Feature: Logic Level Gate |
Drain to Source Voltage (Vdss): 30V |
Current - Continuous Drain (Id) @ 25°C: 8A |
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V |
Power - Max: 2.9W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 6.6A 8-SOIC |
In Stock477 More on Order |
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Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 6.6A |
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |
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|
Vishay Siliconix |
Transistors - FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7.6A 8-SOIC |
In Stock349 More on Order |
|
Series: TrenchFET® |
FET Type: 2 N-Channel (Dual) |
FET Feature: Standard |
Drain to Source Voltage (Vdss): 40V |
Current - Continuous Drain (Id) @ 25°C: 7.6A |
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V |
Power - Max: 3.1W |
Operating Temperature: -55°C ~ 150°C (TJ) |
Mounting Type: Surface Mount |
Package / Case: 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: 8-SO |