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FETs, MOSFETs - Arrays

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CategorySemiconductors / Transistors / FETs, MOSFETs - Arrays
Records 3,829
Page 106/128
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
FET Type
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRF9358PBF
Infineon Technologies

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 9.2A 8SOIC

In Stock208

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Series: HEXFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI1557DH-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 12V 1.2A SC70-6

In Stock118

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Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.2A, 770mA
Rds On (Max) @ Id, Vgs: 235mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 470mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
SI1563EDH-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 1.13A SC70-6

In Stock331

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.13A, 880mA
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 570mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
SI1905BDH-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 0.63A SC70-6

In Stock298

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 542mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 4V
Power - Max: 357mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
SI1970DH-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 1.3A SC70-6

In Stock459

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
SI3529DV-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 2.5A 6-TSOP

In Stock293

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3529DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 2.5A 6-TSOP

In Stock146

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.95A
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 205pF @ 20V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3905DV-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 6-TSOP

In Stock397

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3905DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 8V 6-TSOP

In Stock440

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3909DV-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 6TSOP

In Stock366

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3909DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 6TSOP

In Stock228

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.15W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3981DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 1.6A 6-TSOP

In Stock315

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 185mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3983DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 20V 2.1A 6-TSOP

In Stock170

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI3993DV-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2P-CH 30V 1.8A 6-TSOP

In Stock436

More on Order

Series: TrenchFET®
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 133mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP
SI4226DY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 25V 8A 8SOIC

In Stock297

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1255pF @ 15V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4230DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8A 8SOIC

In Stock468

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4310BDY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 7.5A 14SOIC

In Stock306

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A, 9.8A
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
Power - Max: 1.14W, 1.47W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC
SI4330DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 6.6A 8-SOIC

In Stock452

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4388DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 10.7A 8-SOIC

In Stock320

More on Order

Series: TrenchFET®
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.7A, 11.3A
Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 946pF @ 15V
Power - Max: 3.3W, 3.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4539ADY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 4.4A 8-SOIC

In Stock378

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4542DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8-SOIC

In Stock390

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4544DY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8-SOIC

In Stock498

More on Order

Series: TrenchFET®
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4544DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 30V 8-SOIC

In Stock348

More on Order

Series: TrenchFET®
FET Type: N and P-Channel, Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4561DY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 6.8A 8-SOIC

In Stock470

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.8A, 7.2A
Rds On (Max) @ Id, Vgs: 35.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 20V
Power - Max: 3W, 3.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4562DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 20V 8-SOIC

In Stock470

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4563DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 8A 8-SOIC

In Stock462

More on Order

Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 20V
Power - Max: 3.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4565ADY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 6.6A 8-SOIC

In Stock280

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Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.6A
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 625pF @ 20V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4567DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 5A 8-SOIC

In Stock351

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Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.4A
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 20V
Power - Max: 2.75W, 2.95W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4569DY-T1-GE3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET N/P-CH 40V 7.6A 8-SOIC

In Stock182

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Series: TrenchFET®
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7.6A, 7.9A
Rds On (Max) @ Id, Vgs: 27mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 855pF @ 20V
Power - Max: 3.1W, 3.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
SI4622DY-T1-E3
Vishay Siliconix

Transistors - FETs, MOSFETs - Arrays

MOSFET 2N-CH 30V 8A 8-SOIC

In Stock323

More on Order

Series: SkyFET®, TrenchFET®
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 16mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2458pF @ 15V
Power - Max: 3.3W, 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO