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Transistors

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BFR840L3RHESDE6327XTSA1
BFR840L3RHESDE6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.6V 75GHZ TSLP-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.6V
  • Frequency - Transition: 75GHz
  • Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
  • Gain: 27dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
In Stock488

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BFR843EL3E6327XTSA1
BFR843EL3E6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.6V TSLP-3-10

  • Manufacturer: Infineon Technologies
  • Series: *
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.6V
  • Gain: 25.5dB
  • Power - Max: 125mW
  • Current - Collector (Ic) (Max): 55mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: TSLP-3-10
In Stock284

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BFR92A,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock170

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BFR92A,235

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock276

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BFR92ALT1
BFR92ALT1

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS 15V 4.5GHZ SOT23

  • Manufacturer: Microsemi Corporation
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 3dB @ 500MHz
  • Power - Max: 273mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock105

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BFR92AW,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock214

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BFR92AW,135

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock415

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BFR92PE6327HTSA1
BFR92PE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 16dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock368

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BFR 92W E6327
BFR 92W E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 11.5dB ~ 17dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock134

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BFR92WH6327XTSA1
BFR92WH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 11.5dB ~ 17dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock216

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BFR93A,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock246

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BFR93A,235

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock376

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BFR93AE6327HTSA1
BFR93AE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 9.5dB ~ 14.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock48,853

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BFR93AR,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock287

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BFR93AW,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock148

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BFR93AW,135

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock297

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BFR 93AW E6327
BFR 93AW E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 15.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock390

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BFR93AWH6327XTSA1
BFR93AWH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 15.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock18,744

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BFR 949L3 E6327
BFR 949L3 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ TSLP-3-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 21.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3-1
In Stock394

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BFR 949T E6327
BFR 949T E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 9GHZ SC75

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
In Stock443

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BFR94A,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock216

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BFR94AW,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock197

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BFS17,215
BFS17,215

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock143

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BFS17,235
BFS17,235

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock221

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BFS17A,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 2.8GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock331

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BFS17A,235

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 2.8GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2.8GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 800MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock280

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BFS17HTA
BFS17HTA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock498

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BFS17HTC
BFS17HTC

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock116

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BFS17NQTA
BFS17NQTA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 11V 3.2GHZ SOT23

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Frequency - Transition: 3.2GHz
  • Power - Max: 310mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock420

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BFS17NTA
BFS17NTA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 11V 3.2GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Frequency - Transition: 3.2GHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock4,329

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