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Transistors

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BFS17PE6327HTSA1
BFS17PE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock113,854

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BFS 17P E6433
BFS 17P E6433

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock486

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BFS17PE6752HTSA1
BFS17PE6752HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT23-3

  • Manufacturer: Infineon Technologies
  • Series: *
In Stock133

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BFS 17P E8211
BFS 17P E8211

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT23-3

  • Manufacturer: Infineon Technologies
  • Series: *
In Stock189

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BFS17SE6327HTSA1
BFS17SE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 15V 1.4GHZ SOT363

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
In Stock186

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BFS17SH6327XTSA1
BFS17SH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 15V 1.4GHZ SOT363

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
In Stock333

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BFS17TA
BFS17TA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock210

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BFS17W,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.6GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock447

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BFS17W,135

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.6GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.6GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock438

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BFS17WE6327HTSA1
BFS17WE6327HTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock308

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BFS17WH6327XTSA1
BFS17WH6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ SOT323-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
In Stock26,673

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BFS17WH6393XTSA1
BFS17WH6393XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN SOT323-3

  • Manufacturer: Infineon Technologies
  • Series: *
In Stock195

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BFS25A,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 5GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
  • Power - Max: 32mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock275

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BFS 360L6 E6327
BFS 360L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock320

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BFS 380L6 E6327
BFS 380L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 9V 14GHZ TSLP-6-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.9dB @ 1.8GHz ~ 3GHz
  • Gain: 8dB ~ 12dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock457

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BFS 386L6 E6327
BFS 386L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 6V 14GHZ TSLP-6-1

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW, 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V / 60 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 35mA, 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock443

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BFS 460L6 E6327
BFS 460L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN 5.8V 22GHZ TSLP-6

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock422

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BFS 466L6 E6327
BFS 466L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 5V/9V 14GHZ TSLP

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5V, 9V
  • Frequency - Transition: 22GHz, 14GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 12dB ~ 17dB
  • Power - Max: 200mW, 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V / 90 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 50mA, 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock203

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BFS 469L6 E6327
BFS 469L6 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 5V/10V 9GHZ TSLP

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5V, 10V
  • Frequency - Transition: 22GHz, 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
  • Gain: 14.5dB
  • Power - Max: 200mW, 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 50mA, 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-1
In Stock252

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BFS 481 E6327
BFS 481 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 20dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
In Stock307

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BFS481H6327XTSA1
BFS481H6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 20dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: P-SOT363-6
In Stock7,984

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BFS 483 E6327
BFS 483 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 19dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
In Stock451

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BFS483H6327XTSA1
BFS483H6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 8GHZ SOT363-6

  • Manufacturer: Infineon Technologies
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 19dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-6
In Stock8,444

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BFS505,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock125

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BFS520,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock392

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BFS520,135

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock427

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BFS540,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 9GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 1.7dB @ 9MHz
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock137

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BFT25,215
BFT25,215

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 2.3GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): 5.5dB @ 500MHz
  • Power - Max: 30mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1mA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock4,763

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BFT25A,215

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
  • Power - Max: 32mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
  • Current - Collector (Ic) (Max): 6.5mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock47,103

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BFT92,215
BFT92,215

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 15V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.5dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 14mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock412

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