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Transistors

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BFT92E6327
BFT92E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 15V 5GHZ SOT23-3

  • Manufacturer: Infineon Technologies
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
  • Gain: 8dB ~ 13.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 25mA
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock288

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BFT92W,115

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 15V 4GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock298

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BFT93,215
BFT93,215

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 5GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock222

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BFT93W,115

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 12V 4GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): 2.4dB ~ 3dB @ 500MHz ~ 1GHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock240

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BFU520AR
BFU520AR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock4,348

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BFU520AVL
BFU520AVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock473

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BFU520R
BFU520R

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock211

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BFU520VL
BFU520VL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock349

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BFU520WF
BFU520WF

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 13dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock123

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BFU520WX
BFU520WX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock40,664

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BFU520XAR
BFU520XAR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock137

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BFU520XRR
BFU520XRR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock3,649

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BFU520XRVL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock374

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BFU520XVL
BFU520XVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock189

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BFU520YF
BFU520YF

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 10GHZ SOT363

  • Manufacturer: NXP USA Inc.
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 14dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock440

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BFU520YX
BFU520YX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 12V 10GHZ SOT363

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 19dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock9,340

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BFU530AR
BFU530AR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock17,685

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BFU530AVL
BFU530AVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock417

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BFU530R
BFU530R

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock310

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BFU530VL
BFU530VL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock104

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BFU530WF
BFU530WF

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 12.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock358

More on Order

BFU530WX
BFU530WX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock444

More on Order

BFU530XAR
BFU530XAR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 22dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock472

More on Order

BFU530XRR
BFU530XRR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 21dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock353

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BFU530XRVL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 16.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock334

More on Order

BFU530XVL
BFU530XVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 16.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock327

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BFU550AR
BFU550AR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock52,651

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BFU550AVL
BFU550AVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ TO236AB

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
In Stock317

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BFU550R
BFU550R

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 21dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock48,945

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BFU550VL
BFU550VL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 15dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock361

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