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Transistors

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CP681-MPSH81-CT
CP681-MPSH81-CT

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ DIE

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock249

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CP681-MPSH81-CT20
CP681-MPSH81-CT20

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ DIE

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock471

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CPH6001A-TL-E
CPH6001A-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 6.7GHZ 6CPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.7GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
  • Gain: 11dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
In Stock215

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CPH6003A-TL-E
CPH6003A-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7GHZ 6CPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
In Stock314

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CPH6020-TL-E
CPH6020-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 6CPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 13.5dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-CPH
In Stock364

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CPH6021-TL-H
CPH6021-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ 6CPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 14dB @ 1GHz
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-CPH
In Stock497

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DMC506E20R
DMC506E20R

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 20V 650MHZ SOT363

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
In Stock434

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DME375A
DME375A

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.15GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 6.5dB
  • Power - Max: 375W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock426

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DME400A
DME400A

Microsemi

Transistors - Bipolar (BJT) - RF

TRANSISTOR BIPO 55AW-1

  • Manufacturer: Microsemi Corporation
In Stock471

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DME500
DME500

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.15GHZ 55KT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 6dB ~ 6.5dB
  • Power - Max: 1700W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
In Stock163

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DME800
DME800

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.15GHZ 55ST-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Gain: 9dB ~ 10dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
In Stock406

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DSA9G01C0L
DSA9G01C0L

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

TRANSISTOR RF PNP SSMINI3

  • Manufacturer: Panasonic Electronic Components
In Stock123

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DSC5G0200L
DSC5G0200L

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-85
  • Supplier Device Package: SMini3-F2-B
In Stock4,032

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DSC9F0100L
DSC9F0100L

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 1.9GHZ SSMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.9GHz
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
In Stock119

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DSC9G0200L
DSC9G0200L

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SSMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
In Stock183

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DSC9G02C0L
DSC9G02C0L

Panasonic Electronic Components

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 650MHZ SSMINI3

  • Manufacturer: Panasonic Electronic Components
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
In Stock26,360

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EC3H02BA-TL-H
EC3H02BA-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 7GHZ 3-ECSP1006

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 8.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-ECSP1006
In Stock255

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EC4H08C-TL-H
EC4H08C-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 24GHZ ECSP1008

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 24GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 17dB
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFDFN
  • Supplier Device Package: 4-ECSP1008
In Stock226

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EC4H09C-TL-H
EC4H09C-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 26GHZ ECSP1008

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 26GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
  • Gain: 15dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFDFN
  • Supplier Device Package: 4-ECSP1008
In Stock273

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FH102A-TR-E
FH102A-TR-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS 2 NPN 10V 7GHZ 6MCP

  • Manufacturer: ON Semiconductor
  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-MCP
In Stock349

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FH105A-TR-E
FH105A-TR-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 10V 8GHZ 6MCP

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
  • Gain: 10dB @ 1.5GHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-MCP
In Stock290

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FMMT5179TA
FMMT5179TA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock289

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FMMT5179TC
FMMT5179TC

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock448

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FMMT918TA
FMMT918TA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock282

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FMMT918TC
FMMT918TC

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock292

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FMMTH10TA
FMMTH10TA

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock251

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FMMTH10TC
FMMTH10TC

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 500MHz
  • Power - Max: 330mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock325

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FPNH10
FPNH10

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock174

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HFA3046B
HFA3046B

Renesas Electronics America Inc.

Transistors - Bipolar (BJT) - RF

RF TRANS 5 NPN 12V 8GHZ 14SOIC

  • Manufacturer: Renesas Electronics America Inc.
  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
In Stock132

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HFA3046B96
HFA3046B96

Renesas Electronics America Inc.

Transistors - Bipolar (BJT) - RF

RF TRANS 5 NPN 12V 8GHZ 14SOIC

  • Manufacturer: Renesas Electronics America Inc.
  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
In Stock205

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