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Records 64,903

Page 128/2164

Part Number	Description	In Stock
HFA3046BZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 14SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	In Stock2,930 More on Order
HFA3046BZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 14SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	In Stock462 More on Order
HFA3096B Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS NPN/PNP 5D.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock499 More on Order
HFA3096B96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS NPN/PNP 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock476 More on Order
HFA3096BZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 12/15V 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock4,020 More on Order
HFA3096BZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 12/15V 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 3 NPN + 2 PNP Voltage - Collector Emitter Breakdown (Max): 12V, 15V Frequency - Transition: 8GHz, 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V / 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock401 More on Order
HFA3102B96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 6 NPN 12V 10GHZ 14SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	In Stock115 More on Order
HFA3102BZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 6 NPN 12V 10GHZ 14SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	In Stock171 More on Order
HFA3102BZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 6 NPN 12V 10GHZ 14SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 6 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz Gain: 12.4dB ~ 17.5dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	In Stock106 More on Order
HFA3127B Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock422 More on Order
HFA3127B96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock137 More on Order
HFA3127BZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock2,364 More on Order
HFA3127BZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock253 More on Order
HFA3127R Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock153 More on Order
HFA3127R96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock451 More on Order
HFA3127RZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock530 More on Order
HFA3127RZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 NPN 12V 8GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock289 More on Order
HFA3128B Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock398 More on Order
HFA3128BZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock335 More on Order
HFA3128BZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16SOIC Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	In Stock134 More on Order
HFA3128R Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock309 More on Order
HFA3128R96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock379 More on Order
HFA3128RZ Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock221 More on Order
HFA3128RZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 5 PNP 15V 5.5GHZ 16QFN Manufacturer: Renesas Electronics America Inc. Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	In Stock311 More on Order
HFA3134IH96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 9V 8.5GHZ SOT23-6 Manufacturer: Renesas Electronics America Inc. Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	In Stock336 More on Order
HFA3134IHZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 9V 8.5GHZ SOT23-6 Manufacturer: Renesas Electronics America Inc. Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 8.5GHz Noise Figure (dB Typ @ f): 2.4dB @ 1GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 48 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	In Stock207 More on Order
HFA3135IH96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 2 PNP 9V 7GHZ SOT23-6 Manufacturer: Renesas Electronics America Inc. Transistor Type: 2 PNP (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 5.2dB @ 900MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	In Stock165 More on Order
HFA3135IHZ96 Renesas Electronics America Inc.	Transistors - Bipolar (BJT) - RF RF TRANS 2 PNP 9V 7GHZ SOT23-6 Manufacturer: Renesas Electronics America Inc. Transistor Type: 2 PNP (Dual) Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 5.2dB @ 900MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10mA, 2V Current - Collector (Ic) (Max): 26mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	In Stock475 More on Order
HN3C10FUTE85LF Toshiba Semiconductor and Storage	Transistors - Bipolar (BJT) - RF RF TRANS 2 NPN 12V 7GHZ US6 Manufacturer: Toshiba Semiconductor and Storage Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 11.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	In Stock458 More on Order
ITC1100 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 65V 1.03GHZ 55SW Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Gain: 10dB ~ 10.5dB Power - Max: 3400W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SW Supplier Device Package: 55SW	In Stock479 More on Order

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